BUK9620-100B

BUK9620-100B N-channel TrenchMOS logic level FET Rev. 02 — 6 May 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC-Q101 compliant „ Low conduction losses due to low on-state resistance „ Suitable for logic level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V, 24 V and 42 V loads „ Automotive and general purpose power switching „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Static characteristics RDSon drain-source on-state resistance VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 11 Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 63 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped Min Typ Max Unit - - 100 V - - 63 A - - 203 W - 16.4 22.3 mΩ - 16.2 20 mΩ - - 222 mJ Nexperia BUK9620-100B N-channel TrenchMOS logic level FET 2. Pinning information T...