BUK9620-55A

BUK9620-55A N-channel TrenchMOS logic level FET Rev. 02 — 4 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  Low conduction losses due to low on-state resistance  Q101 compliant  Suitable for logic level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V and 24 V loads  Automotive and general purpose power switching  Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source Tj ≥ 25 °C; Tj ≤ 175 °C voltage ID drain current VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 3 Ptot total power Tmb = 25 °C; see Figure 2 dissipation Static characteristics RDSon drain-source on-state resistance VGS = 4.5 V; ID = 25 A; Tj = 25 °C VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 13 Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 48 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped Min Typ Max Unit - - 55 V - - 54 A - - 118 W - - 21 mΩ - 15 18 mΩ - 17 20 mΩ - - 115 mJ Nexperia BUK9620-55A N-channel TrenchMOS logic level FET 2. Pinning informa...