Document
BUK9675-100A
N-channel TrenchMOS logic level FET
18 August 2015
Product data sheet
1. General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
• AEC Q101 compliant • Low conduction losses due to low on-state resistance
3. Applications
• Automotive and general purpose power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
- - 100 V
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
- - 23 A
Ptot total power dissipation Tmb = 25 °C; Fig. 1
- - 98 W
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 10 A; Tj = 25 °C;
resistance
Fig. 12
- 55 72 mΩ
VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 12
- 60 75 mΩ
Avalanche ruggedness
EDS(AL)S
non-repetitive drain- ID = 23 A; Vsup ≤ 100 V; RGS = 50 Ω; [1][2] - - 100 mJ
source avalanche
VGS = 5 V; Tj(init) = 25 °C; unclamped;
energy
Fig. 4
[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [2] Refer to application note AN10273 for further information.
Nexperia
BUK9675-100A
N-channel TrenchMOS logic level FET
5. Pinning information
Table 2. Pinning information Pin Symbol Description
Simplified outline
1 G gate
mb
2 D drain
3 S source
mb D
mounting base; connected to drain
2 13
D2PAK (SOT404)
Graphic symbol
D
G mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK9675-100A
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
Version SOT404
7. Marking
Table 4. Marking codes Type number BUK9675-100A
Marking code BUK9675-100A
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
RGS = 20 kΩ
VGS gate-source voltage
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
ID drain current
Tmb = 100 °C; VGS = 5 V; Fig. 2
Tmb = 25 °C; VGS = 5 V; Fig. 2
IDM peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 3
Tstg storage temperature
Tj junction temperature
BUK9675-100A
All information provided in this document is subject to legal disclaimers.
Product data sheet
18 August 2015
Min Max Unit - 100 V
- 100 V
-15 15
V
- 98 W
- 16 A
- 23 A
- 92 A
-55 175 °C
-55 175 °C
© Nexperia B.V. 2017. All rights reserved
2 / 12
Nexperia
BUK9675-100A
N-channel TrenchMOS logic level FET
Symbol
Parameter
Source-drain diode
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source avalanche energy
Conditions
Min Max Unit
Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C
- 23 A - 92 A
ID = 23 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped; Fig. 4
[1][2]
-
100 mJ
[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [2] Refer to application note AN10273 for further information.
120
Pder (%)
03aa16
25 ID (A)
20
aaa-019260
80 15
10 40
5
0 0 50 100 150 200 Tmb (°C)
Fig. 1. Normalized total power dissipation as a function of mounting base temperature
Fig. 2.
0 0 25 50 75 100 125 150 175 200 Tmb (°C)
VGS ≥ 5V
Continuous drain current as a function of mounting base temperature
BUK9675-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
18 August 2015
© Nexperia B.V. 2017. All rights reserved
3 / 12
Nexperia
BUK9675-100A
N-channel TrenchMOS logic level FET
103 IDM (A)
003aaf172
102 IAL (A)
003aaf188
102 RDS(on) = VDS / ID 10
tp = 1 µs 10 µs
100 µs
D.C. 1 ms
1 10 ms 1 10 102 VDS (V)
Tmb = 25 °C; IDM is single pulse
103
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Fig. 4.
10 1
10-1
(1) (2) (3)
10-2 10-3
10-2
10-1
1 tAL (ms)
10
(1) Tj (init) = 25°C; (2) Tj (init) = 150°C; (3) Repetitive Avalanche
Avalanche rating; avalanche current as a function of avalanche time
9. Thermal characteristics
Table 6. Symbol Rth(j-mb)
Rth(j-a)
Thermal characteristics Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Conditions Minimum footprint; FR4 board
Min Typ Max Unit - - 1.5 K/W
- 50 - K/W
10 Zth(j-mb)
(K/W)
003aaf173
1 δ = 0.5
10- 1
0.2
0.1 0.05 0.02
0 10- 2
10- 6
10- 5
10- 4
P
δ=
tp T
10- 3
tp T
t
10- 2
10- 1 1 tp (s)
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9675-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
18 August 2015
© Nexperia.