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BUK9675-100A Dataheets PDF



Part Number BUK9675-100A
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet BUK9675-100A DatasheetBUK9675-100A Datasheet (PDF)

BUK9675-100A N-channel TrenchMOS logic level FET 18 August 2015 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • AEC Q101 compliant • Low conduction losses due to low on-state resistance 3. Applications • Automotive and general purpose .

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BUK9675-100A N-channel TrenchMOS logic level FET 18 August 2015 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • AEC Q101 compliant • Low conduction losses due to low on-state resistance 3. Applications • Automotive and general purpose power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 - - 23 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 98 W Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 10 A; Tj = 25 °C; resistance Fig. 12 - 55 72 mΩ VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 12 - 60 75 mΩ Avalanche ruggedness EDS(AL)S non-repetitive drain- ID = 23 A; Vsup ≤ 100 V; RGS = 50 Ω; [1][2] - - 100 mJ source avalanche VGS = 5 V; Tj(init) = 25 °C; unclamped; energy Fig. 4 [1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [2] Refer to application note AN10273 for further information. Nexperia BUK9675-100A N-channel TrenchMOS logic level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate mb 2 D drain 3 S source mb D mounting base; connected to drain 2 13 D2PAK (SOT404) Graphic symbol D G mbb076 S 6. Ordering information Table 3. Ordering information Type number Package Name BUK9675-100A D2PAK Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) Version SOT404 7. Marking Table 4. Marking codes Type number BUK9675-100A Marking code BUK9675-100A 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C VDGR drain-gate voltage RGS = 20 kΩ VGS gate-source voltage Ptot total power dissipation Tmb = 25 °C; Fig. 1 ID drain current Tmb = 100 °C; VGS = 5 V; Fig. 2 Tmb = 25 °C; VGS = 5 V; Fig. 2 IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 3 Tstg storage temperature Tj junction temperature BUK9675-100A All information provided in this document is subject to legal disclaimers. Product data sheet 18 August 2015 Min Max Unit - 100 V - 100 V -15 15 V - 98 W - 16 A - 23 A - 92 A -55 175 °C -55 175 °C © Nexperia B.V. 2017. All rights reserved 2 / 12 Nexperia BUK9675-100A N-channel TrenchMOS logic level FET Symbol Parameter Source-drain diode IS source current ISM peak source current Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Conditions Min Max Unit Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C - 23 A - 92 A ID = 23 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped; Fig. 4 [1][2] - 100 mJ [1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [2] Refer to application note AN10273 for further information. 120 Pder (%) 03aa16 25 ID (A) 20 aaa-019260 80 15 10 40 5 0 0 50 100 150 200 Tmb (°C) Fig. 1. Normalized total power dissipation as a function of mounting base temperature Fig. 2. 0 0 25 50 75 100 125 150 175 200 Tmb (°C) VGS ≥ 5V Continuous drain current as a function of mounting base temperature BUK9675-100A Product data sheet All information provided in this document is subject to legal disclaimers. 18 August 2015 © Nexperia B.V. 2017. All rights reserved 3 / 12 Nexperia BUK9675-100A N-channel TrenchMOS logic level FET 103 IDM (A) 003aaf172 102 IAL (A) 003aaf188 102 RDS(on) = VDS / ID 10 tp = 1 µs 10 µs 100 µs D.C. 1 ms 1 10 ms 1 10 102 VDS (V) Tmb = 25 °C; IDM is single pulse 103 Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage Fig. 4. 10 1 10-1 (1) (2) (3) 10-2 10-3 10-2 10-1 1 tAL (ms) 10 (1) Tj (init) = 25°C; (2) Tj (init) = 150°C; (3) Repetitive Avalanche Avalanche rating; avalanche current as a function of avalanche time 9. Thermal characteristics Table 6. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions Minimum footprint; FR4 board Min Typ Max Unit - - 1.5 K/W - 50 - K/W 10 Zth(j-mb) (K/W) 003aaf173 1 δ = 0.5 10- 1 0.2 0.1 0.05 0.02 0 10- 2 10- 6 10- 5 10- 4 P δ= tp T 10- 3 tp T t 10- 2 10- 1 1 tp (s) Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9675-100A Product data sheet All information provided in this document is subject to legal disclaimers. 18 August 2015 © Nexperia.


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