BUK9675-55A
N-channel TrenchMOS logic level FET
Rev. 2 — 8 February 2011
Product data sheet
1. Product profile
1.1 Ge...
BUK9675-55A
N-channel TrenchMOS logic level FET
Rev. 2 — 8 February 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Symbol VDS
ID
Ptot
Quick reference data
Parameter
Conditions
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
drain current
VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 3
total power dissipation
Tmb = 25 °C; see Figure 2
Min Typ Max Unit - - 55 V
- - 20 A
- - 62 W
Nexperia
BUK9675-55A
N-channel TrenchMOS logic level FET
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Static characteristics
RDSon
drain-source on-state resistance
VGS = 4.5 V; ID = 10 A; Tj = 25 °C
VGS = 10 V; ID = 10 A; Tj = 25 °C
VGS = 5 V; ID = 10 A; Tj = 25 °C; see Figure 12; see Figure 13
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source avalanche energy
ID = 12 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C;...