BUK9875-100A

BUK9875-100A N-channel TrenchMOS logic level FET 19 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits Low conduction losses due to low on-state resistance Q101 compliant Suitable for logic level gate drive sources 3. Applications 12 V, 24 V and 42 V loads Automotive and general purpose power switching Motors, lamps and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C ID drain current VGS = 5 V; Tsp = 25 °C; Fig. 2; Fig. 3 Ptot total power dissipation Tsp = 25 °C; Fig. 1 Static characteristics RDSon drain-source on-state resistance VGS = 4.5 V; ID = 8 A; Tj = 25 °C VGS = 10 V; ID = 8 A; Tj = 25 °C VGS = 5 V; ID = 8 A; Tj = 25 °C; Fig. 12; Fig. 13 Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy ID = 7 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped Min Typ Max Unit - - 100 V - - 7A - - 8W - - 84 mΩ - 62 72 mΩ - 64 75 mΩ - - 49 mJ Nexperia BUK9875-100A N-channel TrenchMOS logic level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source 4 D drain Simplified outline 4 123 SC-73 (SOT223) ...