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BUK9J0R9-40H Dataheets PDF



Part Number BUK9J0R9-40H
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet BUK9J0R9-40H DatasheetBUK9J0R9-40H Datasheet (PDF)

BUK9J0R9-40H N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E 31 May 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in an enhanced LFPAK56E package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Features and benefits • Fully automotive qualified to AEC-Q101: • 175 °C rating suitable for thermally dema.

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BUK9J0R9-40H N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E 31 May 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in an enhanced LFPAK56E package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Features and benefits • Fully automotive qualified to AEC-Q101: • 175 °C rating suitable for thermally demanding environments • Trench 9 Superjunction technology: • Reduced cell pitch enables enhanced power density and efficiency with lower RDSon in same footprint • Improved SOA and avalanche capability compared to standard TrenchMOS • Tight VGS(th) limits enable easy paralleling of MOSFETs • LFPAK Gull Wing leads: • High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages • Visual (AOI) soldering inspection, no need for expensive x-ray equipment • Easy solder wetting for good mechanical solder joint • LFPAK copper clip technology: • Improved reliability, with reduced Rth and RDSon • Increases maximum current capability and improved current spreading 3. Applications • 12 V automotive systems • Motors, lamps and solenoid control • Start-Stop micro-hybrid applications • Transmission control • Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 Min Typ Max Unit - - 40 V [1] - - 220 A - - 500 W Nexperia BUK9J0R9-40H N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E Symbol Parameter Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge Source-drain diode Qr recovered charge S softness factor Conditions VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 ID = 25 A; VDS = 20 V; VGS = 4.5 V; Fig. 13; Fig. 14 IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 20 V; Tj = 25 °C IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 20 V; Tj = 25 °C; Fig. 17 Min Typ Max Unit 0.53 0.76 0.9 mΩ - 12.7 25.3 nC - 52.6 - nC - 0.77 - [1] 220A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain 1234 LFPAK56E; PowerSO8 (SOT1023) Graphic symbol D G mbb076 S 6. Ordering information Table 3. Ordering information Type number Package Name BUK9J0R9-40H LFPAK56E; Power-SO8 Description plastic, single-ended surface-mounted package (LFPAK56); 4 leads; 1.27 mm pitch Version SOT1023 7. Marking Table 4. Marking codes Type number BUK9J0R9-40H Marking code 90H.


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