Document
BUK9J0R9-40H
N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E
31 May 2018
Product data sheet
1. General description
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in an enhanced LFPAK56E package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance.
2. Features and benefits
• Fully automotive qualified to AEC-Q101:
• 175 °C rating suitable for thermally demanding environments • Trench 9 Superjunction technology:
• Reduced cell pitch enables enhanced power density and efficiency with lower RDSon in same footprint
• Improved SOA and avalanche capability compared to standard TrenchMOS • Tight VGS(th) limits enable easy paralleling of MOSFETs • LFPAK Gull Wing leads:
• High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages
• Visual (AOI) soldering inspection, no need for expensive x-ray equipment • Easy solder wetting for good mechanical solder joint • LFPAK copper clip technology:
• Improved reliability, with reduced Rth and RDSon • Increases maximum current capability and improved current spreading
3. Applications
• 12 V automotive systems • Motors, lamps and solenoid control • Start-Stop micro-hybrid applications • Transmission control • Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1
Min Typ Max Unit - - 40 V [1] - - 220 A - - 500 W
Nexperia
BUK9J0R9-40H
N-channel 40 V, 0.9 mΩ logic level MOSFET in LFPAK56E
Symbol
Parameter
Static characteristics
RDSon
drain-source on-state resistance
Dynamic characteristics
QGD gate-drain charge
Source-drain diode Qr recovered charge
S softness factor
Conditions
VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11
ID = 25 A; VDS = 20 V; VGS = 4.5 V; Fig. 13; Fig. 14
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 20 V; Tj = 25 °C IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 20 V; Tj = 25 °C; Fig. 17
Min Typ Max Unit 0.53 0.76 0.9 mΩ
- 12.7 25.3 nC
- 52.6 - nC - 0.77 -
[1] 220A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature.
5. Pinning information
Table 2. Pinning information Pin Symbol Description
Simplified outline
1 S source
2 S source
3 S source
4 G gate
mb D
mounting base; connected to drain
1234
LFPAK56E; PowerSO8 (SOT1023)
Graphic symbol
D
G mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK9J0R9-40H
LFPAK56E; Power-SO8
Description
plastic, single-ended surface-mounted package (LFPAK56); 4 leads; 1.27 mm pitch
Version SOT1023
7. Marking
Table 4. Marking codes Type number BUK9J0R9-40H
Marking code 90H.