BUK9K12-60E

BUK9K12-60E Dual N-channel 60 V, 11.5 mΩ logic level MOSFET 8 May 2014 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 [1] Ptot total power dissipation Tmb = 25 °C; Fig. 1 Static characteristics FET1 and FET2 RDSon drain-source on-state VGS = 5 V; ID = 15 A; Tj = 25 °C; Fig. 11 resistance Dynamic characteristics FET1 and FET2 QGD gate-drain charge ID = 15 A; VDS = 48 V; VGS = 5 V; Tj = 25 °C; Fig. 13; Fig. 14 [1] Continuous current is limited by package. Min Typ Max Unit - - 60 V - - 35 A - - 68 W - 9.5 11.5 mΩ - 8.27 - nC Nexperia BUK9K12-60E Dual N-channel 60 V, 11.5 mΩ logic level MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source1 2 G1 gate1 3 S2 s...