BUK9K20-80E

BUK9K20-80E Dual N-channel 80 V, 20 mΩ logic level MOSFET 11 May 2018 Product data sheet 1. General description Dual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET AEC-Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C 3. Applications 12 V, 24 V and 48 V automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Limiting values FET1 and FET2 VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 Ptot total power dissipation Tmb = 25 °C; Fig. 1 Static characteristics FET1 and FET2 RDSon drain-source on-state VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 11 resistance Dynamic characteristics FET1 and FET2 QGD gate-drain charge ID = 10 A; VDS = 64 V; VGS = 5 V; Tj = 25 °C; Fig. 13; Fig. 14 Source-drain diode FET1 and FET2 Qr recovered charge IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 25 V; Tj = 25 °C Min Typ Max Unit - - 80 V - - 23 A - - 68 W - 14.2 19.4 mΩ - 9.4 - nC - 36.5 - nC Nexperia BUK9K20-80E Dual N-channel 80 V, 20 mΩ ...