Dual N-channel MOSFET
BUK9K22-80E
Dual N-channel 80 V, 22 mΩ logic level MOSFET
11 May 2018
Product data sheet
1. General description
Dual...
Description
BUK9K22-80E
Dual N-channel 80 V, 22 mΩ logic level MOSFET
11 May 2018
Product data sheet
1. General description
Dual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
2. Features and benefits
Dual MOSFET AEC-Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
3. Applications
12 V, 24 V and 48 V automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Limiting values FET1 and FET2
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Tj junction temperature
Static characteristics FET1 and FET2
RDSon
drain-source on-state VGS = 5 V; ID = 10 A; Tj = 175 °C;
resistance
Fig. 12
VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 11
Dynamic characteristics FET1 and FET2
QGD QG(tot)
gate-drain charge total gate charge
ID = 10 A; VDS = 64 V; VGS = 5 V; Tj = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit
----55 -
80 V 21 A 64 W 175 °C
- - 54.5 mΩ - 15.7 21.7 mΩ
- 8.4 - nC - 23.1 - nC
Nexperia
BUK9K22-80E
Dual N-channel 80 V, 22 mΩ logic l...
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