BUK9K29-100E

BUK9K29-100E Dual N-channel TrenchMOS logic level FET 28 March 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) > 0.5 V @ 175 °C 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Start-stop micro-hybrid applications Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 1 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Tj junction temperature Static characteristics FET1 and FET2 RDSon drain-source on-state VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 12 resistance Dynamic characteristics FET1 and FET2 QG(tot) QGD total gate charge gate-drain charge ID = 10 A; VDS = 80 V; VGS = 10 V; Tj = 25 °C; Fig. 14; Fig. 15 Min Typ Max Unit - - 100 V - - 30 A - - 68 W -55 - 175 °C - 25.1 29 mΩ - 54 - nC - 10.9 - nC Nexperia BUK9K29-100E Dual N-channel TrenchMOS logic level FET Symbol Parameter Conditions Avalanche Ruggedness FET1 and FET2 EDS(AL)S non-repetitive drainsourc...