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BUK9K30-80E Dataheets PDF



Part Number BUK9K30-80E
Manufacturers nexperia
Logo nexperia
Description Dual N-channel MOSFET
Datasheet BUK9K30-80E DatasheetBUK9K30-80E Datasheet (PDF)

BUK9K30-80E Dual N-channel 80 V, 30 mΩ logic level MOSFET 12 May 2018 Product data sheet 1. General description Dual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits • Dual MOSFET • AEC-Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • Tr.

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BUK9K30-80E Dual N-channel 80 V, 30 mΩ logic level MOSFET 12 May 2018 Product data sheet 1. General description Dual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits • Dual MOSFET • AEC-Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C 3. Applications • 12 V, 24 V and 48 V automotive systems • Motors, lamps and solenoid control • Transmission control • Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Limiting values FET1 and FET2 VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 Ptot total power dissipation Tmb = 25 °C; Fig. 1 Static characteristics FET1 and FET2 RDSon drain-source on-state VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 11 resistance Dynamic characteristics FET1 and FET2 QGD gate-drain charge ID = 5 A; VDS = 64 V; VGS = 5 V; Tj = 25 °C; Fig. 13; Fig. 14 Source-drain diode FET1 and FET2 Qr recovered charge IS = 5 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 25 V; Tj = 25 °C Min Typ Max Unit - - 80 V - - 17 A - - 53 W - 21 30 mΩ - 6.2 - nC - 30.8 - nC Nexperia BUK9K30-80E Dual N-channel 80 V, 30 mΩ logic level MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source1 2 G1 gate1 3 S2 source2 4 G2 gate2 5 D2 drain2 6 D2 drain2 7 D1 drain1 8 D1 drain1 Simplified outline 8765 Graphic symbol D1 D1 D2 D2 1234 LFPAK56D (SOT1205) S1 G1 S2 G2 mbk725 6. Ordering information Table 3. Ordering information Type number Package Name BUK9K30-80E LFPAK56D Description plastic, single ended surface mounted package (LFPAK56D); 8 leads Version SOT1205 7. Marking Table 4. Marking codes Type number BUK9K30-80E Marking code 93080E BUK9K30-80E Product data sheet All information provided in this document is subject to legal disclaimers. 12 May 2018 © Nexperia B.V. 2018. All rights reserved 2 / 12 Nexperia BUK9K30-80E Dual N-channel 80 V, 30 mΩ logic level MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Limiting values FET1 and FET2 VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C VDGR drain-gate voltage RGS = 20 kΩ VGS gate-source voltage DC; Tj ≤ 175 °C Pulsed; Tj ≤ 175 °C Ptot total power dissipation Tmb = 25 °C; Fig. 1 ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 VGS = 5 V; Tmb = 100 °C; Fig. 2 IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 Tstg storage temperature Tj junction temperature Source-drain diode FET1 and FET2 IS source current Tmb = 25 °C ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C Avalanche ruggedness FET1 and FET2 EDS(AL)S non-repetitive drainsource avalanche energy ID = 17 A; Vsup ≤ 80 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped; Fig. 4 [1] Accumulated Pulse duration up to 50 hours delivers zero defect ppm. [2] Significantly longer life times are achieved by lowering Tj and or VGS. [3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [4] Refer to application note AN10273 for further information. Min Max Unit [1] [2] -10 -15 -55 -55 80 V 80 V 10 V 15 V 53 W 17 A 12 A 68 A 175 °C 175 °C - 17 A - 68 A [3] [4] - 72 mJ BUK9K30-80E Product data sheet All information provided in this document is subject to legal disclaimers. 12 May 2018 © Nexperia B.V. 2018. All rights reserved 3 / 12 Nexperia 120 Pder (%) 80 40 03aa16 BUK9K30-80E Dual N-channel 80 V, 30 mΩ logic level MOSFET 20 ID (A) 15 aaa-026806 10 5 0 0 50 100 150 200 Tmb (°C) Fig. 1. Normalized total power dissipation as a function of mounting base temperature 102 ID (A) Limit RDSon = VDS / ID 10 0 0 25 50 75 100 125 150 175 200 Tmb (°C) VGS ≥ 5 V Fig. 2. Continuous drain current as a function of mounting base temperature, FET1 and FET2 tp = 10 µs 100 µs aaa-026885 DC 1 1 ms 10-1 10 ms 100 ms 10-2 10-1 1 10 102 103 VDS (V) Tmb = 25 °C; IDM is a single pulse Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage, FET1 and FET2 BUK9K30-80E Product data sheet All information provided in this document is subject to legal disclaimers. 12 May 2018 © Nexperia B.V. 2018. All rights reserved 4 / 12 Nexperia 102 IAL (A) 10 1 10-1 BUK9K30-80E Dual N-channel 80 V, 30 mΩ logic level MOSFET aaa-026807 (1) (2) (3) Fig. 4. 10-2 10-3 10-2 10-1 1 tAL (ms) 10 (1) Tj (init) = 25°C; (2) Tj (init) = 150°C; (3) Repetitive Avalanche Avalanche rating; avalanche current as a function of avala.


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