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BUK9M20-40H

nexperia

N-channel MOSFET

BUK9M20-40H N-channel 40 V, 20.0 mΩ logic level MOSFET in LFPAK33 29 January 2019 Product data sheet 1. General desc...


nexperia

BUK9M20-40H

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BUK9M20-40H N-channel 40 V, 20.0 mΩ logic level MOSFET in LFPAK33 29 January 2019 Product data sheet 1. General description Automotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications. 2. Features and benefits Fully automotive qualified to AEC-Q101 at 175 °C Trench 9 superjunction technology: Low power losses, high power density LFPAK copper clip package technology: High robustness and reliability Gull wing leads for high manufacturability and AOI Repetitive avalanche rated 3. Applications 12 V automotive systems Powertrain, chassis, body and infotainment applications Medium/Low power motor drive DC-DC systems LED lighting 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge Source-drain diode Qr recovered charge Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 [1] VGS = 10 V; ID = 10 A; Tj = 25 °C; Fig. 11 ID = 10 A; VDS = 20 V; VGS = 4.5 V; Fig. 13; Fig. 14 IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 20 V Min Typ Max Unit - - 40 V - - 25 A - - 38 W 11 15.8 20 mΩ - 1 2 nC - 10 - nC Nexperia BUK9M20-40H N-channel 40 V, 20.0 mΩ logic level ...




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