BUK9M42-60E

BUK9M42-60E N-channel 60 V, 42 mΩ logic level MOSFET in LFPAK33 30 March 2020 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C 3. Applications 12 V automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 11 ID = 5 A; VDS = 48 V; VGS = 5 V; Tj = 25 °C; Fig. 13; Fig. 14 Min Typ Max Unit - - 60 V - - 22 A - - 44 W - 34 42 mΩ - 3.4 - nC Nexperia BUK9M42-60E N-channel 60 V, 42 mΩ logic level MOSFET in LFPAK33 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1S Source 2S Source 3S Source 4G Gate mb D Mounting base; connected to drain 1234 LFPAK33 (SOT1210) Graphic sym...