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BUK9M6R7-40H Dataheets PDF



Part Number BUK9M6R7-40H
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet BUK9M6R7-40H DatasheetBUK9M6R7-40H Datasheet (PDF)

BUK9M6R7-40H N-channel 40 V, 6.7 mΩ logic level MOSFET in LFPAK33 29 January 2019 Product data sheet 1. General description Automotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications. 2. Features and benefits • Fully automotive qualified to AEC-Q101 at 175 °C • Trench 9 superjunction technology: • Low power losses, high power density .

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BUK9M6R7-40H N-channel 40 V, 6.7 mΩ logic level MOSFET in LFPAK33 29 January 2019 Product data sheet 1. General description Automotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications. 2. Features and benefits • Fully automotive qualified to AEC-Q101 at 175 °C • Trench 9 superjunction technology: • Low power losses, high power density • LFPAK copper clip package technology: • High robustness and reliability • Gull wing leads for high manufacturability and AOI • Repetitive avalanche rated 3. Applications • 12 V automotive systems • Powertrain, chassis, body and infotainment applications • Medium/Low power motor drive • DC-DC systems • LED lighting 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge Source-drain diode Qr recovered charge Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 [1] VGS = 10 V; ID = 20 A; Tj = 25 °C; Fig. 11 ID = 20 A; VDS = 20 V; VGS = 4.5 V; Fig. 13; Fig. 14 IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 20 V; Tj = 25 °C Min Typ Max Unit - - 40 V - - 50 A - - 65 W 3.8 5.5 6.7 mΩ - 2.5 5 nC - 16 - nC Nexperia BUK9M6R7-40H N-channel 40 V, 6.7 mΩ logic level MOSFET in LFPAK33 Symbol S Parameter softness factor Conditions IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 20 V; Tj = 25 °C; Fig. 17 Min Typ Max Unit - 0.6 - [1] 50A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S source 2 S source 3 S source 4 G gate mb D Mounting base; connected to drain 1234 LFPAK33 (SOT1210) Graphic symbol D G mbb076 S 6. Ordering information Table 3. Ordering information Type number Package Name BUK9M6R7-40H LFPAK33 Description Plastic, single ended surface mounted package (LFPAK33); 8 leads; 0.65 mm pitch Version SOT1210 7. Marking Table 4. Marking codes Type number BUK9M6R7-40H Marking code 96H740 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 40 V VGS gate-source voltage DC; Tj ≤ 175 °C -10 16 V Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 65 W ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] - 50 A VGS = 10 V; Tmb = 100 °C; Fig. 2 - 50 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 282 A Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Source-drain d.


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