Document
BUK9Y104-100B
N-channel TrenchMOS logic level FET
Rev. 04 — 7 April 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low on-state resistance
Q101 compliant
Suitable for logic level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads Automotive systems DC-to-DC converters
General purpose power switching Solenoid drivers
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C
voltage
ID
drain current
VGS = 5 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Ptot
total power
Tmb = 25 °C
dissipation
Static characteristics
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 5 A; Tj = 25 °C
VGS = 5 V; ID = 5 A; Tj = 25 °C; see Figure 11; see Figure 12
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source avalanche energy
Dynamic characteristics
ID = 14.8 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped
QGD
gate-drain charge VGS = 5 V; ID = 5 A; VDS = 80 V; see Figure 13
Min Typ Max Unit - - 100 V - - 14.8 A - - 59 W
- 86 99 mΩ - 91 104 mΩ
- - 35 mJ
- 4.7 - nC
Nexperia
BUK9Y104-100B
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2. Pin 1 2 3 4 mb
Pinning information Symbol Description S source S source S source G gate D mounting base; connected to
drain
Simplified outline
mb
1234
SOT669 (LFPAK)
3. Ordering information
Graphic symbol
D
G mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK9Y104-100B
LFPAK
Description
Version
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
BUK9Y104-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 7 April 2010
© Nexperia B.V. 2017. All rights reserved
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Nexperia
BUK9Y104-100B
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VDS VDGR VGS ID
Parameter drain-source voltage drain-gate voltage gate-source voltage drain current
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ
Tmb = 25 °C; VGS = 5 V; see Figure 1; see Figure 3
Min Typ Max Unit
- - 100 V
- - 100 V
-15 -
15 V
- - 14.8 A
Tmb = 100 °C; VGS = 5 V; see Figure 1
- - 10.48 A
IDM
peak drain current
Tmb = 25 °C; tp ≤ 10 µs; pulsed;
see Figure 3
- - 59 A
Ptot total power dissipation Tstg storage temperature Tj junction temperature Source-drain diode
Tmb = 25 °C
--55 -55 -
59 W 175 °C 175 °C
IS source current ISM peak source current Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source.