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BUK9Y104-100B Dataheets PDF



Part Number BUK9Y104-100B
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet BUK9Y104-100B DatasheetBUK9Y104-100B Datasheet (PDF)

BUK9Y104-100B N-channel TrenchMOS logic level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Q101 compliant „ Suitable for logic l.

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BUK9Y104-100B N-channel TrenchMOS logic level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Q101 compliant „ Suitable for logic level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V, 24 V and 42 V loads „ Automotive systems „ DC-to-DC converters „ General purpose power switching „ Solenoid drivers 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source Tj ≥ 25 °C; Tj ≤ 175 °C voltage ID drain current VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 3 Ptot total power Tmb = 25 °C dissipation Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 5 A; Tj = 25 °C VGS = 5 V; ID = 5 A; Tj = 25 °C; see Figure 11; see Figure 12 Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics ID = 14.8 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped QGD gate-drain charge VGS = 5 V; ID = 5 A; VDS = 80 V; see Figure 13 Min Typ Max Unit - - 100 V - - 14.8 A - - 59 W - 86 99 mΩ - 91 104 mΩ - - 35 mJ - 4.7 - nC Nexperia BUK9Y104-100B N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S source S source S source G gate D mounting base; connected to drain Simplified outline mb 1234 SOT669 (LFPAK) 3. Ordering information Graphic symbol D G mbb076 S Table 3. Ordering information Type number Package Name BUK9Y104-100B LFPAK Description Version plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 BUK9Y104-100B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 © Nexperia B.V. 2017. All rights reserved 2 of 14 Nexperia BUK9Y104-100B N-channel TrenchMOS logic level FET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Tmb = 25 °C; VGS = 5 V; see Figure 1; see Figure 3 Min Typ Max Unit - - 100 V - - 100 V -15 - 15 V - - 14.8 A Tmb = 100 °C; VGS = 5 V; see Figure 1 - - 10.48 A IDM peak drain current Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 - - 59 A Ptot total power dissipation Tstg storage temperature Tj junction temperature Source-drain diode Tmb = 25 °C --55 -55 - 59 W 175 °C 175 °C IS source current ISM peak source current Avalanche ruggedness EDS(AL)S non-repetitive drain-source.


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