BUK9Y11-30B

BUK9Y11-30B N-channel TrenchMOS logic level FET Rev. 01 — 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features I Very low on-state resistance I 175 °C rated I Q101 compliant I Logic level compatible 1.3 Applications I Automotive systems I Motors, lamps and solenoids I General purpose power switching I 12 V loads 1.4 Quick reference data I EDS(AL)S ≤ 112 mJ I ID ≤ 59 A I RDSon = 9.3 mΩ (typ) I Ptot ≤ 75 W 2. Pinning information Table 1. Pinning Pin Description 1, 2, 3 source (S) 4 gate (G) mb mounting base; connected to drain (D) Simplified outline mb Symbol D G 1234 SOT669 (LFPAK) mbl798 S1 S2 S3 Nexperia BUK9Y11-30B N-channel TrenchMOS logic level FET 3. Ordering information Table 2. Ordering information Type number Package Name BUK9Y11-30B LFPAK 4. Limiting values Description plastic single-ended surface-mounted package (LFPAK); 4 leads Version SOT669 Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS VDGR VGS ID drain-source voltage drain-gate voltage (DC) gate-source voltage drain current IDM peak drain current Ptot total power dissipation Tstg storage temperature Tj junction temperature Source-drain diode RGS = 20 kΩ Tmb = 25 °C; VGS = 5 V; see Figure 2 and 3 Tmb = 100 °C; VGS = ...