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BUK9Y113-100E Dataheets PDF



Part Number BUK9Y113-100E
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet BUK9Y113-100E DatasheetBUK9Y113-100E Datasheet (PDF)

BUK9Y113-100E N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate .

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BUK9Y113-100E N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C 3. Applications • 12 V, 24 V and 48 V Automotive systems • Motors, lamps and solenoid control • Transmission control • Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 1 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Static characteristics RDSon drain-source on-state VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 11 resistance Dynamic characteristics QGD gate-drain charge VGS = 5 V; ID = 5 A; VDS = 80 V; Tj = 25 °C; Fig. 13; Fig. 14 Min Typ Max Unit - - 100 V - - 12 A - - 45 W - 97 113 mΩ - 3.9 - nC Nexperia BUK9Y113-100E N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S source mb 2 S source 3 S source 4G mb D gate mounting base; connected to drain 1234 LFPAK56; PowerSO8 (SOT669) Graphic symbol D G mbb076 S 6. Ordering information Table 3. Ordering information Type number Package Name BUK9Y113-100E LFPAK56; Power-SO8 Description Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads Version SOT669 7. Marking Table 4. Marking codes Type number BUK9Y113-100E Marking code 911310E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C VDGR drain-gate voltage RGS = 20 kΩ VGS gate-source voltage Tj ≤ 175 °C; DC Tj ≤ 175 °C; Pulsed ID drain current Tmb = 25 °C; VGS = 5 V; Fig. 1 Tmb = 100 °C; VGS = 5 V; Fig. 1 IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 Ptot total power dissipation Tmb = 25 °C; Fig. 2 [1][2] Min -10 -15 - Max 100 100 10 15 12 8.5 48 45 Unit V V V V A A A W BUK9Y113-100E Product data sheet All information provided in this document is subject to legal disclaimers. 8 May 2013 © Nexperia B.V. 2017. All rights reserved 2 / 13 Nexperia BUK9Y113-100E N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 Symbol Parameter Tstg storage temperature Tj junction temperature Source-drain diode IS source current ISM peak source current Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Conditions Min Max Unit -55 175 °C -55 175 °C Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C - ID = 12 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped; Fig. 3 [3][4] - 12 A 48 A 13.4 mJ [1] Accumulated pulse duration up to 50 hours delivers zero defect ppm [2] Significantly longer life times are achieved by lowering Tj and or VGS [3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [4] Refer to application note AN10273 for further information. 16 ID (A) 12 003aai850 120 Pder (%) 80 03aa16 8 40 4 0 0 50 100 150 200 Tmb(°C) Fig. 1. Continuous drain current as a function of mounting base temperature 0 0 50 100 150 200 Tmb (°C) Fig. 2. Normalized total power dissipation as a function of mounting base temperature BUK9Y113-100E Product data sheet All information provided in this document is subject to legal disclaimers. 8 May 2013 © Nexperia B.V. 2017. All rights reserved 3 / 13 Nexperia 102 IAL (A) 10 BUK9Y113-100E N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 003aai851 1 (1) 10-1 (2) (3) 10-2 10-3 10-2 10-1 1 10 tAL (ms) Fig. 3. Avalanche rating; avalanche current as a function of avalanche time 102 ID (A) 10 Limit RDSon = VDS / ID tp =10 µ s 100 µ s 003aai852 1 10-1 DC 1 ms 10 ms 100 ms 10-2 1 10 102 103 VDS(V) Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions Fig. 5 Min Typ Max Unit - - 3.33 K/W BUK9Y113-100E Product data sheet All information provided in this document is subject to legal disclaimers. 8 May 2013 © Nexperia B.V. 2017. All rights reserved 4 / 13 Nexperia BUK9Y113-100E N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 10 Zth(j-mb) (K/W) δ = 0.5 1 0.2 0.1 0.05 10-1 0.02 single shot 003aaj113 P tp δ= T 10-2 10-6 10-5 10-4 10-3 10-2 10-1 tp T tp (s) t 1 Fi.


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