Document
BUK9Y113-100E
N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56
8 May 2013
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
• Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
3. Applications
• 12 V, 24 V and 48 V Automotive systems • Motors, lamps and solenoid control • Transmission control • Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 11 resistance
Dynamic characteristics
QGD
gate-drain charge
VGS = 5 V; ID = 5 A; VDS = 80 V;
Tj = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit - - 100 V - - 12 A - - 45 W
- 97 113 mΩ
- 3.9 - nC
Nexperia
BUK9Y113-100E
N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56
5. Pinning information
Table 2. Pinning information Pin Symbol Description
Simplified outline
1 S source
mb
2 S source
3 S source
4G mb D
gate
mounting base; connected to drain
1234
LFPAK56; PowerSO8 (SOT669)
Graphic symbol
D
G mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK9Y113-100E
LFPAK56; Power-SO8
Description
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads
Version SOT669
7. Marking
Table 4. Marking codes Type number BUK9Y113-100E
Marking code 911310E
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
RGS = 20 kΩ
VGS gate-source voltage
Tj ≤ 175 °C; DC
Tj ≤ 175 °C; Pulsed
ID drain current
Tmb = 25 °C; VGS = 5 V; Fig. 1
Tmb = 100 °C; VGS = 5 V; Fig. 1
IDM peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
[1][2]
Min -10 -15 -
Max 100 100 10 15 12 8.5 48 45
Unit V V V V A A A W
BUK9Y113-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 May 2013
© Nexperia B.V. 2017. All rights reserved
2 / 13
Nexperia
BUK9Y113-100E
N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56
Symbol
Parameter
Tstg storage temperature
Tj junction temperature
Source-drain diode
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source avalanche energy
Conditions
Min Max Unit -55 175 °C -55 175 °C
Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
ID = 12 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped; Fig. 3
[3][4]
-
12 A 48 A
13.4 mJ
[1] Accumulated pulse duration up to 50 hours delivers zero defect ppm [2] Significantly longer life times are achieved by lowering Tj and or VGS [3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [4] Refer to application note AN10273 for further information.
16 ID (A)
12
003aai850
120
Pder (%)
80
03aa16
8
40 4
0 0 50 100 150 200 Tmb(°C)
Fig. 1. Continuous drain current as a function of mounting base temperature
0 0 50 100 150 200 Tmb (°C)
Fig. 2. Normalized total power dissipation as a function of mounting base temperature
BUK9Y113-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 May 2013
© Nexperia B.V. 2017. All rights reserved
3 / 13
Nexperia
102 IAL (A)
10
BUK9Y113-100E
N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56
003aai851
1 (1)
10-1
(2) (3)
10-2 10-3
10-2
10-1
1 10 tAL (ms)
Fig. 3. Avalanche rating; avalanche current as a function of avalanche time
102 ID (A)
10
Limit RDSon = VDS / ID
tp =10 µ s 100 µ s
003aai852
1 10-1
DC
1 ms 10 ms 100 ms
10-2 1
10 102 103 VDS(V)
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6. Symbol Rth(j-mb)
Thermal characteristics Parameter
thermal resistance from junction to mounting base
Conditions Fig. 5
Min Typ Max Unit - - 3.33 K/W
BUK9Y113-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 May 2013
© Nexperia B.V. 2017. All rights reserved
4 / 13
Nexperia
BUK9Y113-100E
N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56
10 Zth(j-mb)
(K/W)
δ = 0.5 1
0.2
0.1 0.05 10-1 0.02
single shot
003aaj113
P
tp δ= T
10-2 10-6
10-5
10-4
10-3
10-2
10-1
tp T
tp (s)
t 1
Fi.