BUK9Y12-40E

BUK9Y12-40E N-channel 40 V, 12 mΩ logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 1 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Static characteristics RDSon drain-source on-state VGS = 5 V; ID = 15 A; Tj = 25 °C; Fig. 11 resistance Dynamic characteristics QGD gate-drain charge VGS = 5 V; ID = 15 A; VDS = 32 V; Tj = 25 °C; Fig. 13; Fig. 14 Min Typ Max Unit - - 40 V - - 52 A - - 65 W - 11.2 12 mΩ - 3.4 - nC Nexperia BUK9Y12-40E N-channel 40 V, 12 mΩ logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S source mb 2 S source 3 S source 4G mb D gate mounting base; connected to drain 1234 LFPAK56; ...