BUK9Y19-55B

BUK9Y19-55B N-channel TrenchMOS logic level FET Rev. 03 — 29 February 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features „ 175 °C rated „ Q101 compliant „ Logic level compatible „ Very low on-state resistance 1.3 Applications „ 12 V and 24 V loads „ General purpose power switching „ Automotive systems „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter ID drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Conditions VGS = 5 V; Tmb = 25 °C; see Figure 1 and 4 Tmb = 25 °C; see Figure 2 VGS = 5 V; ID = 20 A; Tj = 25 °C; see Figure 12 and 13 ID = 46 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped Min Typ Max Unit - - 46 A - - 85 W - 16.3 19 mΩ - - 80 mJ Nexperia BUK9Y19-55B N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pin 1 2 3 4 mb Pinning Symbol S S S G D Description source source source gate mounting base; connected to drain 3. Ordering information Simplified outline mb 1234 SOT669 (LFPAK) Graphic symbol D G mbb076 S Table 3. Or...