BUK9Y30-75B
N-channel TrenchMOS logic level FET
Rev. 04 — 10 April 2008
Product data sheet
1. Product profile
1.1 Gen...
BUK9Y30-75B
N-channel TrenchMOS logic level FET
Rev. 04 — 10 April 2008
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low on-state resistance
Suitable for logic level gate drive sources
Q101 compliant
Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads General purpose power switching
Automotive systems Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Symbol VDS ID
Quick reference Parameter drain-source voltage drain current
Ptot total power dissipation Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalanche energy
Dynamic characteristics
QGD gate-drain charge
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; see Figure 1 and 4 Tmb = 25 °C; see Figure 2
ID = 34 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped
VGS = 5 V; ID = 25 A; VDS = 60 V; Tj = 25 °C; see Figure 14
VGS = 5 V; ID = 15 A; Tj = 25 °C; see Figure 12 and 13
Min Typ Max Unit - - 75 V - - 34 A - - 85 W - - 78 mJ
- 9 - nC
- 25 30 mΩ
Nexperia
BUK9Y30-75B
N-channel TrenchMOS logic level FET
2. Pinning informa...