PMV100ENEA
30 V, N-channel Trench MOSFET
17 March 2016
Product data sheet
1. General description
N-channel enhancement...
PMV100ENEA
30 V, N-channel Trench MOSFET
17 March 2016
Product data sheet
1. General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified
3. Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 3 A; Tj = 25 °C
Min Typ Max Unit
- - 30 V
-20 -
20 V
[1] - - 3 A
- 54 72 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
Nexperia
PMV100ENEA
30 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain
Simplified outline
3
Graphic symbol
D
12
TO-236AB (SOT23)
G
S 017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMV100ENEA
TO-236AB
Description plastic surface-mounted package; 3 leads
Version SOT23
7. Marking
Table 4. Marking codes Type number
PMV100ENEA
Marking code ...