Document
PMV65ENEA
40 V, N-channel Trench MOSFET
28 April 2016
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Logic-level compatible • Very fast switching • Trench MOSFET technology • Electrostatic Discharge (ESD) protection > 2 kV HBM • AEC-Q101 qualified
3. Applications
• Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 2.7 A; Tj = 25 °C
Min Typ Max Unit
- - 40 V
-20 -
20 V
[1] - - 2.7 A
- 64 75 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
Nexperia
PMV65ENEA
40 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain
Simplified outline
3
Graphic symbol
D
12
TO-236AB (SOT23)
G
S 017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMV65ENEA
TO-236AB
Description plastic surface-mounted package; 3 leads
Version SOT23
7. Marking
Table 4. Marking codes Type number
PMV65ENEA
Marking code [1]
BT%
[1] % = placeholder for manufacturing site code
PMV65ENEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 April 2016
© Nexperia B.V. 2017. All rights reserved
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Nexperia
PMV65ENEA
40 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
EDS(AL)S
non-repetitive drain-source avalanche energy
Tj(init) = 25 °C; ID = 0.3 A; DUT in avalanche (unclamped)
Ptot
total power dissipation
Tamb = 25 °C
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
ESD maximum rating
VESD
electrostatic discharge voltage
Tsp = 25 °C
Tamb = 25 °C HBM
[1] [1]
[2] [1]
[1] [3]
Min Max Unit - 40 V
-20 20
V
- 2.7 A
- 1.7 A
- 11 A
- 6.5 mJ
- 490 mW - 940 mW - 6.25 W -55 150 °C -55 150 °C -65 150 °C
- 0.91 A
- 2000 V
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
PMV65ENEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 April 2016
© Nexperia B.V. 2017. All rights reserved
3 / 16
Nexperia
120 Pder (%)
80
017aaa123
PMV65ENEA
40 V, N-channel Trench MOSFET
120
Ider (%)
80
017aaa124
40 40
0 - 75 - 25
25
75 125 175 Tj (°C)
Fig. 1. Normalized total power dissipation as a function of junction temperature
0 - 75 - 25
25
75 125 175 Tj (°C)
Fig. 2. Normalized continuous drain current as a function of junction temperature
102 ID (A)
10
Limit RDSon = VDS/ID
aaa-022633
tp = 10 µs
1 DC; Tsp = 25 °C
DC; Tamb = 25 °C; 10-1 drain mounting pad 6 cm2
100 µs
1 ms 10 ms 100 ms
10-2 10-1
IDM = single pulse
1
10 102 VDS (V)
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6. Symbol Rth(j-a)
Thermal characteristics Parameter
thermal resistance from junction to ambient
Conditions in free air
Min Typ Max Unit
[1] -
221 254 K/W
[2] -
116 133 K/W
PMV65ENEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 April 2016
© Nexperia B.V. 2017. All rights reserved
4 / 16
Nexperia
PMV65ENEA
40 V, N-channel Trench MOSFET
Symbol Rth(j-sp)
Parameter
Conditions
thermal resistance from junction to solder point
Min Typ Max Unit - 17 20 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.
103 aaa-022634
Zth(j-a) (K/W) duty cycle = 1
0.75 102 0.50
0.33 0.25 0.20
0.10
0.05
10 0.02 0.01 0
1 10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103 tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 aaa-022635
Zth(j-a) (K/W)
duty cycle = 1 102 0.75
0.50
0.33 0.25 0.20
0.10
0.05 10
0.02 0.01 0
1 10-3
10-2
10-1
FR4 PCB, mounting pad f.