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PMV65ENEA Dataheets PDF



Part Number PMV65ENEA
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet PMV65ENEA DatasheetPMV65ENEA Datasheet (PDF)

PMV65ENEA 40 V, N-channel Trench MOSFET 28 April 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • Electrostatic Discharge (ESD) protection > 2 kV HBM • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • Low-si.

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PMV65ENEA 40 V, N-channel Trench MOSFET 28 April 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • Electrostatic Discharge (ESD) protection > 2 kV HBM • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 2.7 A; Tj = 25 °C Min Typ Max Unit - - 40 V -20 - 20 V [1] - - 2.7 A - 64 75 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2. Nexperia PMV65ENEA 40 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline 3 Graphic symbol D 12 TO-236AB (SOT23) G S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name PMV65ENEA TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 7. Marking Table 4. Marking codes Type number PMV65ENEA Marking code [1] BT% [1] % = placeholder for manufacturing site code PMV65ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 28 April 2016 © Nexperia B.V. 2017. All rights reserved 2 / 16 Nexperia PMV65ENEA 40 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 10 V; Tamb = 25 °C VGS = 10 V; Tamb = 100 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs EDS(AL)S non-repetitive drain-source avalanche energy Tj(init) = 25 °C; ID = 0.3 A; DUT in avalanche (unclamped) Ptot total power dissipation Tamb = 25 °C Tj junction temperature Tamb ambient temperature Tstg storage temperature Source-drain diode IS source current ESD maximum rating VESD electrostatic discharge voltage Tsp = 25 °C Tamb = 25 °C HBM [1] [1] [2] [1] [1] [3] Min Max Unit - 40 V -20 20 V - 2.7 A - 1.7 A - 11 A - 6.5 mJ - 490 mW - 940 mW - 6.25 W -55 150 °C -55 150 °C -65 150 °C - 0.91 A - 2000 V [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. PMV65ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 28 April 2016 © Nexperia B.V. 2017. All rights reserved 3 / 16 Nexperia 120 Pder (%) 80 017aaa123 PMV65ENEA 40 V, N-channel Trench MOSFET 120 Ider (%) 80 017aaa124 40 40 0 - 75 - 25 25 75 125 175 Tj (°C) Fig. 1. Normalized total power dissipation as a function of junction temperature 0 - 75 - 25 25 75 125 175 Tj (°C) Fig. 2. Normalized continuous drain current as a function of junction temperature 102 ID (A) 10 Limit RDSon = VDS/ID aaa-022633 tp = 10 µs 1 DC; Tsp = 25 °C DC; Tamb = 25 °C; 10-1 drain mounting pad 6 cm2 100 µs 1 ms 10 ms 100 ms 10-2 10-1 IDM = single pulse 1 10 102 VDS (V) Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air Min Typ Max Unit [1] - 221 254 K/W [2] - 116 133 K/W PMV65ENEA Product data sheet All information provided in this document is subject to legal disclaimers. 28 April 2016 © Nexperia B.V. 2017. All rights reserved 4 / 16 Nexperia PMV65ENEA 40 V, N-channel Trench MOSFET Symbol Rth(j-sp) Parameter Conditions thermal resistance from junction to solder point Min Typ Max Unit - 17 20 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2. 103 aaa-022634 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.50 0.33 0.25 0.20 0.10 0.05 10 0.02 0.01 0 1 10-3 10-2 FR4 PCB, standard footprint 10-1 1 10 102 103 tp (s) Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 aaa-022635 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.50 0.33 0.25 0.20 0.10 0.05 10 0.02 0.01 0 1 10-3 10-2 10-1 FR4 PCB, mounting pad f.


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