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74LVC2G00-Q100

nexperia

Dual 2-input NAND gate

74LVC2G00-Q100 Dual 2-input NAND gate Rev. 3 — 20 June 2022 Product data sheet 1. General description The 74LVC2G00-Q1...


nexperia

74LVC2G00-Q100

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Description
74LVC2G00-Q100 Dual 2-input NAND gate Rev. 3 — 20 June 2022 Product data sheet 1. General description The 74LVC2G00-Q100 is a dual 2-input NAND gate. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications. 2. Features and benefits Automotive product qualification in accordance with AEC-Q100 (Grade 1) Specified from -40 °C to +85 °C and from -40 °C to +125 °C Wide supply voltage range from 1.65 V to 5.5 V 5 V tolerant outputs for interfacing with 5 V logic High noise immunity ±24 mA output drive (VCC = 3.0 V) CMOS low power dissipation IOFF circuitry provides partial Power-down mode operation Complies with JEDEC standard: JESD8-7 (1.65 V to 1.95 V) JESD8-5 (2.3 V to 2.7 V) JESD8-B/JESD36 (2.7 V to 3.6 V) Latch-up performance exceeds 250 mA Direct interface with TTL levels Overvoltage tolerant inputs to 5.5 V ESD protection: MIL-STD-883, method 3015 exceeds 2000 V HBM JESD22-A114F excee...




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