20N90K5

STB20N90K5 Datasheet N-channel 900 V, 0.21 Ω typ., 20 A MDmesh™ K5 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1) S(3) AM01475V1 Features Order code VDS STB20N90K5 900 V Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected RDS(on ) max. 0.25 Ω ID 20 A Applications Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STB20N90K5 Product summary Order code STB20N90K5 Marking 20N90K5 Package D²PAK Packing Tape and reel DS11568 - Rev 4 - October 2018 For further information contact your local STMicroelectronics sales office. www.st.com STB20N90K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C ID (1) Drain current (pulsed) PTOT Total dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope dv/dt (3) MOSFET dv/dt ruggedness Tj Operating junction temperature range Tstg Storage temperature range 1. Pulse width limited by safe operating area. 2. ISD ≤ 20 A, di/dt ≤ 100 A/μs; VDS peak ≤ V...