BSS64

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BSS64 NPN high voltage transistor Product data sheet Supersedes data of 2004 Jan 16 2004 Mar 12 NXP Semiconductors NPN high voltage transistor Product data sheet BSS64 FEATURES Low current (max. 100 mA) High voltage (max. 80 V). APPLICATIONS High-voltage general purpose and switching applications Intended for thick and thin-film circuit applications. PINNING PIN 1 2 3 base emitter collector DESCRIPTION DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complement: BSS63. MARKING TYPE NUMBER BSS64 MARKING CODE(1) 60* or AM Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. handbook, halfpage 3 3 1 1 Top view 2 MAM255 2 Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BSS64 NAME − PACKAGE DESCRIPTION plastic surface mounted package; 3 leads VERSION SOT23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector Tamb ≤ 25 °C MIN. − − − − − − − −65 − −65 MAX. 120 80 5 100 250 100 250 +150 150 +150 UNIT V V V mA mA mA mW °C °C °C 2004 Mar 12 2 NXP Semiconduc...