BCX41

NPN Silicon AF and Switching Transistor For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary type: BCX42 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 BCX41 32 1 Type BCX41 Marking EKs Pin Configuration 1=B 2=E 3=C Package SOT23 Maximum Ratings Parameter Symbol Value Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipation TS ≤ 79 °C Junction temperature Storage temperature VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg 125 125 5 800 1 100 200 330 150 -65 ... 150 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value ≤ 215 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA A mA mW °C Unit K/W 1 2011-10-04 BCX41 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 125 - - IC = 10 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 125 - - IC = 100 µA, IE = 0 Emitter-base breakdown voltage V(BR)EBO 5 - - IE = 10 µA, IC = 0 Collector-base cutoff current ICBO VCB = 100 V, IE = 0 - - 0.1 VCB = 100 V, IE = 0 , TA = 150 °C - - 20 Collector-emitter cutoff current VCE = 100 V, TA = 85 °C VCE = 100 V, TA = 125 °C Emitter-base cutoff current VEB...