BSS64

BSS64 High-voltage Amplifier Transistor (100V, 100mA) Parameter VCEO IC Value 100V 100mA lFeatures 1)High breakdown voltage. (BVCEO=100V) 2)Complements the BSS63. lOutline 　 SOT-23 　 SST3 lInner circuit 　 　 　 　 　 Datasheet lApplication HIGH VOLTAGE AMPLIFIER lPackaging specifications Part No. Package BSS64 SOT-23 (SST3) Package size Taping code Reel size (mm) Tape width (mm) Basic ordering unit.(pcs) Marking 2924 T116 180 8 3000 K9F 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. 1/6 20180802 - Rev.003 lAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature 　 　 　 Datasheet Symbol VCBO VCEO VEBO IC ICP*1 PD*2 PD*3 Tj Tstg Values 120 100 6 100 200 200 350 150 -55 to +150 Unit V V V mA mA mW mW ℃ ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage BVCBO IC = 10μA BVCEO IC = 1mA Emitter-base breakdown voltage BVEBO IE = 10μA Collector cut-off current ICBO VCB = 90V VCB = 90V, Ta = 150℃ Emitter cut-off current IEBO VEB = 6V Collector-emitter saturation voltage VCE(sat)1 IC = 25mA, IB = 2.5mA VCE(sat)2 IC = 100mA, IB = 10mA Base-emitter saturation voltage VBE(sat) IC = 25mA, IB = 2.5mA Base-emitter turn on volt...