Document
T1610, T1635, T1650 BTA16, BTB16
Datasheet
Snubberless™, logic level and standard 16 A Triacs
A2
G A1
A2
TO-220AB
G A2 A1
A2
G A1 A2
TO-220AB Ins.
D²PAK
A2 G A1
Product status link
BTA16
BTB16
T1610
T1635
T1650
Product summary
IT(RMS)
16 A
VDRM/VRRM
600, 800 V
IGTSnubberless™
10, 35, 50 mA
IGTstandard
25, 50 mA
Features
• Medium current Triac • Low thermal resistance with clip bonding • Low thermal resistance insulation ceramic for insulated BTA • High commutation (4Q) or very high commutation (3Q, Snubberless™)
capability • BTA series UL1557 certified (file ref: 81734) • Packages are RoHS (2002/95/EC) compliant • Insulated tab (BTA series, rated at 2500 VRMS)
Applications
• Snubberless versions (BTA/BTB...W and T1635) especially recommended for use on inductive loads, because of their high commutation performances
• On/off or phase angle function in applications such as static relays, light dimmers and appliance motor speed controllers
Description
Available either in through-hole or surface mount packages, the BTA16, BTB16 and T1610, T1635 and T1650 Triac series are suitable for general purpose mains power AC switching. They can be used as ON/OFF function in applications such as static relays, heating regulation or induction motor starting circuit. They are also recommended for phase control operations in light dimmers and appliance motors speed controllers.
The Snubberless™ versions (W suffix and T1610, T1635, T1650) are especially recommended for use on inductive loads, because of their high commutation performance.
By using an internal ceramic pad, the Snubberless™ series provide an insulated tab (rated at 2500 VRMS) complying with UL standards (file reference: E81734).
DS2114 - Rev 11 - May 2018 For further information contact your local STMicroelectronics sales office.
www.st.com
T1610, T1635, T1650, BTA16, BTB16
Characteristics
1 Characteristics
Table 1. Absolute maximum ratings
Symbol
Parameters
IT(RMS) RMS on-state current (full sine wave)
ITSM
Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C)
I2t I2t value for fusing Critical rate of rise of on-state current
dl/dt IG = 2 x IGT , tr ≤ 100 ns
VDSM/VRSM Non repetitive surge peak off-state voltage
IGM PG(AV)
Tstg Tj
Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range
TO-220AB, D2PAK Tc = 100 °C
TO-220AB Ins.
Tc = 86 °C
F = 50 Hz
tp = 20 ms
F = 60 Hz
tp = 16.7 ms
tp = 10 ms
Value
16
160 168 144
Unit A
A A2s
F = 120 Hz
Tj = 125 °C
50 A/µs
tp = 10 ms tp = 20 µs
Tj = 25 °C
Tj = 125 °C Tj = 125 °C
VDRM/VRRM + 100 4
1
-40 to +150
-40 to +125
V
A W °C °C
Table 2. Static electrical characteristics
Symbol VT(1) VTO(1) RD(1)
Test conditions ITM = 22.5 A, tp = 380 µs threshold on-state voltage Dynamic resistance
IDRM/IRRM
VDRM = VRRM
1. For both polarities of A2 referenced to A1
Tj 25 °C 125 °C 125 °C 25 °C 125 °C
Max. Max. Max.
Max.
Value 1.55 0.85 25
5 2
Unit V V mΩ µA mA
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) - standard (4 quadrants)
Symbol
Parameters
IGT(1)
VGT VGD IH(2)
IL
VD = 12 V, RL = 33 Ω
VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C IT = 500 mA IG = 1.2 IGT
Quadrant
I - II - III IV All All
I - III - IV II
Max.
Max. Min. Max. Max. Max.
BTA16 BTB16 CB 25 50 50 100
1.3 0.2 25 50 40 60 80 120
Unit
mA V V mA mA
DS2114 - Rev 11
page 2/18
T1610, T1635, T1650, BTA16, BTB16
Characteristics
Symbol
Parameters
dV/dt(2) VD = 67 % VDRM gate open, Tj = 125 °C (dV/dt)c(2) (dI/dt)c = 7 A/ms, Tj = 125 °C
1. Minimum IGT is guaranteed at 5 % of IGT max. 2. For both polarities of A2 referenced to A1
Quadrant
Min. Min.
BTA16 BTB16 CB 200 400 5 10
Unit
V/µs V/µs
Table 4. Electrical characteristics (Tj = 25 °C, unless otherwise specified) - Snubberless and logic level (3 quadrants)
Symbol
Parameters
Quadrant
T1610 / BTA16SW / BTB16SW
IGT(1) VGT
VD = 12 V, RL = 30 Ω
Max. I - II - III Max.
10
VGD VD = VDRM, RL = 3,3 kΩ, Tj = 125 °C
Min.
IH(2) IT = 500 mA
Max.
15
IL IG = 1.2 IGT
I - III II
Max. Max.
25 30
(dV/dt)(2) VD = 67 % VDRM gate open, Tj = 125 °C
Min. 40
(dV/dt)c = 0.1 V/μs, Tj = 125 °C
8.5
(dI/dt)c(2) (dV/dt)c = 10 V/μs, Tj = 125 °C
Min. 3.0
Without snubber, Tj = 125 °C
1. Minimum IGT is guaranteed at 5 % of IGT max. 2. For both polarities of A2 referenced to A1
T1635 / BTA16-CW / BTB16-CW
35 1.3 0.2 35 50 60 500
8.5
T1650 / BTA16-BW / BTB16-BW
50
50 70 80 1000
Unit
mA V V mA
mA
V/µs
A/ms 14
Table 5. Thermal resistance
Symbol
Rth(j-c) Max. junction to case (AC)
Rth(j-a)
Junction to ambient (S = 2 cm²) Junction to ambient
1. Copper surface under tab.
Parameters
TO-220AB / D²PAK TO-220AB insulated
D²PAK TO-220AB / TO-220AB ins
Value 1.2 2.1 45 60
Unit °C/W
DS2114 - Rev 11
page 3/18
T1610, T1635, T1650, BTA16, BTB16
Characteristics (curves)
1.1 Characterist.