2SC5200

UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS  FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SC5200L-x-T3P-T 2SC5200G-x-T3P-T 2SC5200L-x-T3B-T 2SC5200G-x-T3B-T 2SC5200L-x-T3L-T 2SC5200G-x-T3L-T Note: Pin Assignment: B: Base C: Collector E: Emitter Package TO-3P TO-3PB TO-3PL Pin Assignment 123 BCE BCE BCE Packing Tube Tube Tube  MARKING www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 4 QW-R214-005.C 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO 230 V VCEO 230 V Emitter-Base Voltage Collector Current VEBO 5 V IC 15 A Base Current Collector Power Dissipation IB 1.5 A PC 150 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55 ~ 150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base -Emitter Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain...