Document
TVS Diode Arrays (SPA®Diodes)
General Purpose ESD Protection - AQHVxx-01LTG-C Series
AQHVxx-01LTG-C Series, 300W Discrete Bidirectional TVS Diode
RoHS
Pb GREEN
Description
This AQHVxx-01LTG-C series provides a highly effective ESD, EFT, and lightning surge protection component. It is ideally suited for power interfaces, passenger charging interfaces, LED lighting modules, and low speed I/Os.
Its rating of ±30kV ESD exceeds the maximum ESD rating requirements as defined in the IEC 61000-4-2 international standard without suffering any performance degradation. The AQHV12-C can withstand up to 10A of surge current as defined by IEC 61000-4-5 2nd edition providing low voltage clamping levels during lightning induced events.
Pinout
1
2
This component is bidirectional Functional Block Diagram
12
Features
• ESD, IEC 61000-4-2, ±30kV contact, ±30kV air
• EFT, IEC 61000-4-4, 40A (5/50ns)
• Lightning, 10A (8/20μs as defined in IEC 61000-4-5 2nd edition) for AQHV12-C
• Low clamping voltage • PPAP capable
• Low leakage current
• AEC-Q101 qualified
• Moisture Sensitivity Level(MSL -1)
• Halogen free, lead free and RoHS compliant
Applications
• LED Lighting Modules • Portable Instrumentation • General Purpose I/O
• RS232 / RS485 • CAN and LIN Bus • Automotive application
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated.
©2018 Littelfuse, Inc. Specifications are subject to change without notice.
Revision: 07/08/19
TVS Diode Arrays (SPA®Diodes)
General Purpose ESD Protection - AQHVxx-01LTG-C Series
Absolute Maximum Ratings
Symbol
Parameter
Value
Ppk
Peak Pulse Power (tp=8/20μs)
300
TOP
Operating Temperature
-40 to 150
TSTOR
Storage Temperature
-55 to 150
Notes: CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Units W °C °C
AQHV12-C Electrical Characteristics (TOP=25ºC)
Parameter Reverse Standoff Voltage
Breakdown Voltage Reverse Leakage Current
Clamp Voltage1
Dynamic Resistance2 Peak Pulse Current1
ESD Withstand Voltage1
Diode Capacitance1
Symbol VRWM VBR ILEAK
VC
RDYN Ipp
VESD
CI/O-I/O
Test Conditions
IR=1μA IR=1mA VR=12V IPP=1A, tp=8/20µs, I/O to I/O IPP=10A, tP=8/20μs, I/O to I/O TLP, tp=100ns, I/O to I/O tp=8/20µs IEC 61000-4-2 (Contact Discharge)
IEC 61000-4-2 (Air Discharge)
Reverse Bias=0V, f=1MHz
Min 13.3
±30 ±30
Typ
15 5 18 27 0.34
27
Max 12
50 21 30
10
30
AQHV15-C Electrical Characteristics (TOP=25ºC)
Parameter Reverse Standoff Voltage
Breakdown Voltage Reverse Leakage Current
Clamp Voltage1
Dynamic Resistance2 Peak Pulse Current1
ESD Withstand Voltage1
Diode Capacitance1
Symbol VRWM VBR ILEAK
VC
RDYN Ipp
VESD
CI/O-I/O
Test Conditions
IR=1μA IR=1mA VR=15V IPP=1A, tp=8/20µs, I/O to I/O IPP=7A, tp=8/20µs, I/O to I/O TLP, tp=100ns, I/O to I/O tp=8/20µs IEC 61000-4-2 (Contact Discharge)
IEC 61000-4-2 (Air Discharge)
Reverse Bias=0V, f=1MHz
AQHV24-C Electrical Characteristics (TOP=25ºC)
Parameter Reverse Standoff Voltage
Breakdown Voltage Reverse Leakage Current
Clamp Voltage1
Dynamic Resistance2 Peak Pulse Current1
ESD Withstand Voltage1
Diode Capacitance1
Symbol VRWM VBR ILEAK
VC
RDYN Ipp
VESD
CI/O-I/O
Test Conditions
IR=1μA IR=1mA VR=24V IPP=1A, tp=8/20µs, I/O to I/O IPP=5A, tp=8/20µs, I/O to I/O TLP, tp=100ns, I/O to I/O tp=8/20µs IEC 61000-4-2 (Contact Discharge)
IEC 61000-4-2 (Air Discharge)
Reverse Bias=0V, f=1MHz
Min Typ Max
15
16.7 19.5
5 50
23.5
27
33.5
37
0.36
7
±30
±30
21 24
Min 26.7
±25 ±30
Typ
29.5 5
35.5 49.5 0.52
15
Max 24.0
50 40 55
5.0
17
Units V V nA V V Ω A kV kV pF
Units V V nA V V Ω A kV kV pF
Units V V nA V V Ω A kV kV pF
©2018 Littelfuse, Inc. Specifications are subject to change without notice.
Revision: 07/08/19
TVS Diode Arrays (SPA®Diodes)
General Purpose ESD Protection - AQHVxx-01LTG-C Series
AQHV36-C Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
Test Conditions
Reverse Standoff Voltage Breakdown Voltage
Reverse Leakage Current
Clamp Voltage1
Dynamic Resistance2 Peak Pulse Current1
ESD Withstand Voltage1
VRWM VBR ILEAK
VC
RDYN Ipp
VESD
IR=1μA IR=1mA VR=36V IPP=1A, tp=8/20µs, I/O to I/O IPP=3A, tp=8/20µs, I/O to I/O TLP, tp=100ns, I/O to I/O tp=8/20µs IEC 61000-4-2 (Contact Discharge)
IEC 61000-4-2 (Air Discharge)
Diode Capacitance1
CI/O-I/O
Reverse Bias=0V, f=1MHz
Note: 1 Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns
Min 40
±15 ±20
Typ
43.5 5
52.5 67 1.27
11.5
Capacitance vs. Reverse Bias
8/20μs.