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AQHV36-01LTG-C Dataheets PDF



Part Number AQHV36-01LTG-C
Manufacturers Littelfuse
Logo Littelfuse
Description General Purpose ESD Protection
Datasheet AQHV36-01LTG-C DatasheetAQHV36-01LTG-C Datasheet (PDF)

TVS Diode Arrays (SPA®Diodes) General Purpose ESD Protection - AQHVxx-01LTG-C Series AQHVxx-01LTG-C Series, 300W Discrete Bidirectional TVS Diode RoHS Pb GREEN Description This AQHVxx-01LTG-C series provides a highly effective ESD, EFT, and lightning surge protection component. It is ideally suited for power interfaces, passenger charging interfaces, LED lighting modules, and low speed I/Os. Its rating of ±30kV ESD exceeds the maximum ESD rating requirements as defined in the IEC 61000-4-2 in.

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TVS Diode Arrays (SPA®Diodes) General Purpose ESD Protection - AQHVxx-01LTG-C Series AQHVxx-01LTG-C Series, 300W Discrete Bidirectional TVS Diode RoHS Pb GREEN Description This AQHVxx-01LTG-C series provides a highly effective ESD, EFT, and lightning surge protection component. It is ideally suited for power interfaces, passenger charging interfaces, LED lighting modules, and low speed I/Os. Its rating of ±30kV ESD exceeds the maximum ESD rating requirements as defined in the IEC 61000-4-2 international standard without suffering any performance degradation. The AQHV12-C can withstand up to 10A of surge current as defined by IEC 61000-4-5 2nd edition providing low voltage clamping levels during lightning induced events. Pinout 1 2 This component is bidirectional Functional Block Diagram 12 Features • ESD, IEC 61000-4-2, ±30kV contact, ±30kV air • EFT, IEC 61000-4-4, 40A (5/50ns) • Lightning, 10A (8/20μs as defined in IEC 61000-4-5 2nd edition) for AQHV12-C • Low clamping voltage • PPAP capable • Low leakage current • AEC-Q101 qualified • Moisture Sensitivity Level(MSL -1) • Halogen free, lead free and RoHS compliant Applications • LED Lighting Modules • Portable Instrumentation • General Purpose I/O • RS232 / RS485 • CAN and LIN Bus • Automotive application Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. ©2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 07/08/19 TVS Diode Arrays (SPA®Diodes) General Purpose ESD Protection - AQHVxx-01LTG-C Series Absolute Maximum Ratings Symbol Parameter Value Ppk Peak Pulse Power (tp=8/20μs) 300 TOP Operating Temperature -40 to 150 TSTOR Storage Temperature -55 to 150 Notes: CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Units W °C °C AQHV12-C Electrical Characteristics (TOP=25ºC) Parameter Reverse Standoff Voltage Breakdown Voltage Reverse Leakage Current Clamp Voltage1 Dynamic Resistance2 Peak Pulse Current1 ESD Withstand Voltage1 Diode Capacitance1 Symbol VRWM VBR ILEAK VC RDYN Ipp VESD CI/O-I/O Test Conditions IR=1μA IR=1mA VR=12V IPP=1A, tp=8/20µs, I/O to I/O IPP=10A, tP=8/20μs, I/O to I/O TLP, tp=100ns, I/O to I/O tp=8/20µs IEC 61000-4-2 (Contact Discharge) IEC 61000-4-2 (Air Discharge) Reverse Bias=0V, f=1MHz Min 13.3 ±30 ±30 Typ 15 5 18 27 0.34 27 Max 12 50 21 30 10 30 AQHV15-C Electrical Characteristics (TOP=25ºC) Parameter Reverse Standoff Voltage Breakdown Voltage Reverse Leakage Current Clamp Voltage1 Dynamic Resistance2 Peak Pulse Current1 ESD Withstand Voltage1 Diode Capacitance1 Symbol VRWM VBR ILEAK VC RDYN Ipp VESD CI/O-I/O Test Conditions IR=1μA IR=1mA VR=15V IPP=1A, tp=8/20µs, I/O to I/O IPP=7A, tp=8/20µs, I/O to I/O TLP, tp=100ns, I/O to I/O tp=8/20µs IEC 61000-4-2 (Contact Discharge) IEC 61000-4-2 (Air Discharge) Reverse Bias=0V, f=1MHz AQHV24-C Electrical Characteristics (TOP=25ºC) Parameter Reverse Standoff Voltage Breakdown Voltage Reverse Leakage Current Clamp Voltage1 Dynamic Resistance2 Peak Pulse Current1 ESD Withstand Voltage1 Diode Capacitance1 Symbol VRWM VBR ILEAK VC RDYN Ipp VESD CI/O-I/O Test Conditions IR=1μA IR=1mA VR=24V IPP=1A, tp=8/20µs, I/O to I/O IPP=5A, tp=8/20µs, I/O to I/O TLP, tp=100ns, I/O to I/O tp=8/20µs IEC 61000-4-2 (Contact Discharge) IEC 61000-4-2 (Air Discharge) Reverse Bias=0V, f=1MHz Min Typ Max 15 16.7 19.5 5 50 23.5 27 33.5 37 0.36 7 ±30 ±30 21 24 Min 26.7 ±25 ±30 Typ 29.5 5 35.5 49.5 0.52 15 Max 24.0 50 40 55 5.0 17 Units V V nA V V Ω A kV kV pF Units V V nA V V Ω A kV kV pF Units V V nA V V Ω A kV kV pF ©2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 07/08/19 TVS Diode Arrays (SPA®Diodes) General Purpose ESD Protection - AQHVxx-01LTG-C Series AQHV36-C Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions Reverse Standoff Voltage Breakdown Voltage Reverse Leakage Current Clamp Voltage1 Dynamic Resistance2 Peak Pulse Current1 ESD Withstand Voltage1 VRWM VBR ILEAK VC RDYN Ipp VESD IR=1μA IR=1mA VR=36V IPP=1A, tp=8/20µs, I/O to I/O IPP=3A, tp=8/20µs, I/O to I/O TLP, tp=100ns, I/O to I/O tp=8/20µs IEC 61000-4-2 (Contact Discharge) IEC 61000-4-2 (Air Discharge) Diode Capacitance1 CI/O-I/O Reverse Bias=0V, f=1MHz Note: 1 Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns Min 40 ±15 ±20 Typ 43.5 5 52.5 67 1.27 11.5 Capacitance vs. Reverse Bias 8/20μs.


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