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IRL60HS118

Infineon

MOSFET

IRL60HS118 Target Applications  Wireless charging  Adapter  Telecom Benefits  Higher power density designs  Higher...


Infineon

IRL60HS118

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Description
IRL60HS118 Target Applications  Wireless charging  Adapter  Telecom Benefits  Higher power density designs  Higher switching frequency  Uses OptiMOSTM5 Chip  Reduced parts count wherever 5V supplies are available  Driven directly from microcontrollers (slow switching)  System cost reductions Typical values (unless otherwise specified) VDSS 60V min. Qg tot 5.3nC VGS ± 20V max Qgd 2.1nC RDS(on) (max.) 17m@ 10V Vgs(th) 1.7V   Top View   D1 6D D2 G3 D 5D S 4S PQFN 2 mm x 2 mm Base part number IRL60HS118 Package Type PQFN 2mm x 2mm GDS Gate Drain Source Standard Pack Form Tape and Reel Quantity Orderable Part Number 4000 IRL60HS118 RDS(on), Drain-to -Source On Resistance (m ) Typical RDS(on) (m)   80 70 ID = 11A 60 50 40 30 TJ = 125°C 20 10 0 3 TJ = 25°C 4 5 6 7 8 9 10 11 12 VGS, Gate -to -Source Voltage (V) 60 50 VGS = 4.0V VGS = 4.5V VGS = 5.0V 40 VGS = 6.0V VGS = 7.0V VGS = 10V 30 20 10 0 0 10 20 30 40 50 60 ID, Drain Current (A) Figure 1 Typical On-Resistance vs. Gate Voltage Figure 2 Typical On-Resistance vs. Drain Current Final Datasheet www.infineon.com Please read the important Notice and Warnings at the end of this document V2.2 2019-12-13 IRL60HS118 Table of Contents Table of Contents Target Applications …..……..……..………………………………………………………………………...……1 Benefits …..………………………………………………………………………...……………..…………….1 Ordering Table ….……………………………………………………………………………………………………1 Table of Contents ….……………………………………………………………………...




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