MOSFET
IRL60HS118
Target Applications
Wireless charging Adapter Telecom
Benefits
Higher power density designs Higher...
Description
IRL60HS118
Target Applications
Wireless charging Adapter Telecom
Benefits
Higher power density designs Higher switching frequency Uses OptiMOSTM5 Chip Reduced parts count wherever 5V
supplies are available Driven directly from microcontrollers
(slow switching) System cost reductions
Typical values (unless otherwise specified)
VDSS
60V min. Qg tot 5.3nC
VGS
± 20V max Qgd
2.1nC
RDS(on) (max.)
17m@ 10V Vgs(th) 1.7V
Top View
D1
6D
D2 G3
D 5D S 4S
PQFN 2 mm x 2 mm
Base part number IRL60HS118
Package Type PQFN 2mm x 2mm
GDS
Gate
Drain
Source
Standard Pack Form Tape and Reel
Quantity Orderable Part Number
4000
IRL60HS118
RDS(on), Drain-to -Source On Resistance (m ) Typical RDS(on) (m)
80
70
ID = 11A
60
50
40
30 TJ = 125°C 20
10
0 3
TJ = 25°C
4 5 6 7 8 9 10 11 12 VGS, Gate -to -Source Voltage (V)
60
50
VGS = 4.0V VGS = 4.5V
VGS = 5.0V
40
VGS = 6.0V VGS = 7.0V
VGS = 10V
30
20
10
0 0 10 20 30 40 50 60
ID, Drain Current (A)
Figure 1 Typical On-Resistance vs. Gate Voltage Figure 2 Typical On-Resistance vs. Drain Current
Final Datasheet
www.infineon.com
Please read the important Notice and Warnings at the end of this document
V2.2 2019-12-13
IRL60HS118
Table of Contents
Table of Contents
Target Applications …..……..……..………………………………………………………………………...……1
Benefits
…..………………………………………………………………………...……………..…………….1
Ordering Table ….……………………………………………………………………………………………………1
Table of Contents ….……………………………………………………………………...
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