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900N15N Dataheets PDF



Part Number 900N15N
Manufacturers Infineon
Logo Infineon
Description Power Transistor
Datasheet 900N15N Datasheet900N15N Datasheet (PDF)

s OptiMOSTM3 Power-Transistor Package Marking • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 BSZ900N15NS3 G Product Summary V DS R DS(on),max ID 150 V 90 mΩ 13 A PG-TSDSON-8 Type BSZ900N15NS3 G Package PG-TSDSON-8 Marking 900N15N Maximum ratings, at T j=25 °C, u.

  900N15N   900N15N


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s OptiMOSTM3 Power-Transistor Package Marking • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 BSZ900N15NS3 G Product Summary V DS R DS(on),max ID 150 V 90 mΩ 13 A PG-TSDSON-8 Type BSZ900N15NS3 G Package PG-TSDSON-8 Marking 900N15N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=10 A, R GS=25 Ω Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 Value 13 8 52 30 ±20 38 -55 ... 150 55/150/56 Unit A mJ V W °C Rev. 2.1 page 1 2011-05-16 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA 6 cm2 cooling area3) BSZ900N15NS3 G min. Values typ. Unit max. - - 3.3 K/W - - 60 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance V (BR)DSS V GS=0 V, I D=1 mA V GS(th) V DS=V GS, I D=20 µA I DSS V DS=120 V, V GS=0 V, T j=25 °C V DS=120 V, V GS=0 V, T j=125 °C I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=10 A V GS=8 V, I D=5 A RG g fs |V DS|>2|I D|R DS(on)max, I D=10 A 150 2 - 6 3 0.01 10 1 74 75 1.7 12 -V 4 1 µA 100 100 nA 90 mΩ 91 -Ω -S 3) see figure 3 Rev. 2.1 page 2 2011-05-16 Parameter Symbol Conditions BSZ900N15NS3 G min. Values typ. Unit max. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics4) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge C iss C oss C rss t d(on) tr t d(off) tf V GS=0 V, V DS=75 V, f =1 MHz V DD=75 V, V GS=10 V, I D=5 A, R G=1.6 Ω - 380 510 pF 46 61 34 - ns 483- Q gs - 1.9 - nC Q gd Q sw Qg V DD=75 V, I D=5 A, V GS=0 to 10 V - 0.9 - 1.7 - 5.0 7 V plateau - 5.2 - V Q oss V DD=75 V, V GS=0 V - 12 17 nC Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse T C=25 °C V SD V GS=0 V, I F=13 A, T j=25 °C t rr V R=75 V, I F=5 A , Q rr di F/dt =100 A/µs 4) See figure 16 for gate charge parameter definition - - 13 A - - 52 - 0.9 1.2 V - 59 ns - 123 - nC Rev. 2.1 page 3 2011-05-16 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS≥10 V BSZ900N15NS3 G 40 15 35 30 10 25 P tot [W] I D [A] 20 15 5 10 5 0 0 40 80 T C [°C] 3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 102 120 1 µs 0 160 0 40 80 120 T C [°C] 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 10 µs I D [A] Z thJC [K/W] 101 100 10-1 10-1 Rev. 2.1 100 µs 1 ms DC 100 101 102 V DS [V] 0.5 100 0.2 0.1 0.05 0.02 0.01 single pulse 10-1 103 t p [s] page 4 160 2011-05-16 I D [A] R DS(on) [mΩ] 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 30 25 10 V 20 7 V 15 6V 10 5 0 0 5.5 V 4.5 V 5V 12 V DS [V] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 28 BSZ900N15NS3 G 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 150 140 130 5 V 5.5 V 120 6 V 110 100 90 8 V 80 70 10 V 60 50 40 30 20 10 0 3 0 4 8 12 16 I D [A] 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 20 24 15 20 I D [A] g fs [S] 16 10 12 8 4 0 0 Rev. 2.1 150 °C 25 °C 246 V GS [V] 5 0 80 page 5 10 20 I D [A] 30 2011-05-16 9 Drain-source on-state resistance R DS(on)=f(T j); I D=10 A; V GS=10 V 200 BSZ900N15NS3 G 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 4 R DS(on) [mΩ] V GS(th) [V] 180 160 140 120 98 % 100 typ 80 60 40 20 3.5 200 µA 3 20 µA 2.5 2 1.5 1 0.5 0 -60 -20 20 60 100 140 180 T j [°C] 0 -60 -20 20 60 100 140 180 T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 103 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 100 Ciss C [pF] I F [A] 102 Coss 101 Crss 10 100 0 Rev. 2.1 20 40 60 80 100 V DS [V] 1 0 page 6 25 °C 150 °C 150 °C, 98% 25 °C, 98% 0.5 1 1.5 V SD [V] 2 2011-05-16 I AS [A] V GS [V] 13 Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start) 100 10 125 °C 100 °C 25 °C 14 Typ. gate charge V GS=f(Q gate); I D=5 A pulsed parameter: V.


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