Document
s
OptiMOSTM3 Power-Transistor
Package Marking • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21
BSZ900N15NS3 G
Product Summary V DS R DS(on),max ID
150 V 90 mΩ 13 A
PG-TSDSON-8
Type BSZ900N15NS3 G
Package PG-TSDSON-8
Marking 900N15N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=10 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
Value
13 8 52 30 ±20 38 -55 ... 150 55/150/56
Unit A
mJ V W °C
Rev. 2.1
page 1
2011-05-16
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient
R thJC R thJA
6 cm2 cooling area3)
BSZ900N15NS3 G
min.
Values typ.
Unit max.
- - 3.3 K/W - - 60
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
Gate resistance Transconductance
V (BR)DSS V GS=0 V, I D=1 mA V GS(th) V DS=V GS, I D=20 µA
I DSS
V DS=120 V, V GS=0 V, T j=25 °C
V DS=120 V, V GS=0 V, T j=125 °C
I GSS R DS(on)
V GS=20 V, V DS=0 V V GS=10 V, I D=10 A
V GS=8 V, I D=5 A
RG
g fs
|V DS|>2|I D|R DS(on)max, I D=10 A
150 2 -
6
3 0.01
10 1 74 75 1.7 12
-V 4 1 µA
100 100 nA 90 mΩ 91
-Ω -S
3) see figure 3
Rev. 2.1
page 2
2011-05-16
Parameter
Symbol Conditions
BSZ900N15NS3 G
min.
Values typ.
Unit max.
Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics4) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge
C iss C oss C rss t d(on) tr t d(off) tf
V GS=0 V, V DS=75 V, f =1 MHz
V DD=75 V, V GS=10 V, I D=5 A, R G=1.6 Ω
-
380 510 pF 46 61 34 - ns 483-
Q gs - 1.9 - nC
Q gd Q sw Qg
V DD=75 V, I D=5 A, V GS=0 to 10 V
- 0.9 - 1.7 - 5.0 7
V plateau
- 5.2 - V
Q oss
V DD=75 V, V GS=0 V
-
12 17 nC
Reverse Diode Diode continous forward current Diode pulse current
Diode forward voltage
Reverse recovery time Reverse recovery charge
IS I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=13 A, T j=25 °C
t rr V R=75 V, I F=5 A , Q rr di F/dt =100 A/µs
4) See figure 16 for gate charge parameter definition
- - 13 A - - 52
- 0.9 1.2 V
- 59
ns
- 123 - nC
Rev. 2.1
page 3
2011-05-16
1 Power dissipation P tot=f(T C)
2 Drain current I D=f(T C); V GS≥10 V
BSZ900N15NS3 G
40 15
35
30
10 25
P tot [W] I D [A]
20
15 5
10
5
0 0 40 80 T C [°C]
3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p
102
120
1 µs
0 160 0
40 80 120 T C [°C]
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
101
10 µs
I D [A] Z thJC [K/W]
101
100
10-1 10-1
Rev. 2.1
100 µs 1 ms DC
100 101 102 V DS [V]
0.5
100 0.2
0.1
0.05 0.02
0.01
single pulse
10-1 103
t p [s]
page 4
160
2011-05-16
I D [A] R DS(on) [mΩ]
5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS
30
25 10 V 20 7 V
15
6V
10
5
0 0
5.5 V
4.5 V
5V
12 V DS [V]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
28
BSZ900N15NS3 G
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS
150
140 130 5 V
5.5 V
120 6 V
110
100
90 8 V 80 70 10 V
60
50
40
30
20
10
0 3 0 4 8 12 16
I D [A]
8 Typ. forward transconductance g fs=f(I D); T j=25 °C
20
24 15
20
I D [A] g fs [S]
16 10
12
8 4 0
0
Rev. 2.1
150 °C
25 °C
246 V GS [V]
5
0 80
page 5
10 20 I D [A]
30
2011-05-16
9 Drain-source on-state resistance R DS(on)=f(T j); I D=10 A; V GS=10 V
200
BSZ900N15NS3 G 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D
4
R DS(on) [mΩ] V GS(th) [V]
180
160
140
120
98 %
100
typ
80
60
40
20
3.5
200 µA
3
20 µA
2.5
2
1.5
1
0.5
0 -60 -20 20
60 100 140 180
T j [°C]
0 -60 -20 20 60 100 140 180 T j [°C]
11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz
103
12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j
100
Ciss
C [pF] I F [A]
102
Coss
101
Crss
10
100 0
Rev. 2.1
20 40 60 80 100 V DS [V]
1 0
page 6
25 °C 150 °C
150 °C, 98%
25 °C, 98%
0.5 1 1.5 V SD [V]
2
2011-05-16
I AS [A] V GS [V]
13 Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start)
100
10
125 °C
100 °C
25 °C
14 Typ. gate charge V GS=f(Q gate); I D=5 A pulsed parameter: V.