900N20N

Type OptiMOSTM3 Power-Transistor Features Optimized for dc-dc conversion N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Low on-resistance R DS(on) 150 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21 BSZ900N20NS3 G Product Summary VDS RDS(on),max ID 200 V 90 mW 15.2 A PG-TSDSON-8 Type BSZ900N20NS3 G Package Marking PG-TSDSON-8 900N20N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt ID I D,pulse E AS dv /dt T C=25 °C T C=100 °C T C=25 °C I D=7.6 A, R GS=25 W Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) see figure 3 Value 15.2 10.7 61 100 10 ±20 62.5 -55 ... 150 55/150/56 Unit A mJ kV/µs V W °C Rev. 2.2 page 1 2011-07-14 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction - ambient R thJA 6 cm2 cooling area3) BSZ900N20NS3 G min. Values typ. Unit max. - - 2.5 K/W - - 60 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 ...