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IXTH150N15X4

IXYS

Power MOSFET

X4-Class Power MOSFETTM Advance Technical Information IXTP150N15X4 IXTH150N15X4 VDSS = ID25 = RDS(on) 150V 150A 7.2m...


IXYS

IXTH150N15X4

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X4-Class Power MOSFETTM Advance Technical Information IXTP150N15X4 IXTH150N15X4 VDSS = ID25 = RDS(on) 150V 150A 7.2m N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque TO-220 TO-247 Maximum Ratings 150 150 V V 20 V 30 V 150 A 260 A 75 A 1J 10 V/ns 480 W -55 ... +175 175 -55 ... +175 C C C 300 °C 260 °C 1.13 / 10 Nm/lb.in 3g 6g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 150 V 2.5 4.5 V 100 nA 10 A 500 A 6.2 7.2 m G DS TO-247 (IXTH) D (Tab) GDS D (Tab) G = Gate S = Source D = Drain Tab = Drain Features  International Standard Packages   Low RDS(ON) and QG Avalanche Rated  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls ...




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