IXTA130N15X4

X4-Class Power MOSFETTM Advance Technical Information IXTA130N15X4 IXTA130N15X4-7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on)  150V 130A 8.0m TO-263 AA Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 150 150 20 30 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 130 240 65 800 10 400 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force 10.65 / 2.2..14.6 N/lb TO-263 TO-263 (7Leads) 2.5 g 3.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 ID25, Notes 1&2 Characteristic Values Min. Typ. Max. 150 V 2.5 4.5 V 100 nA 5 A 200 A 7.0 8.0 m G S D (Tab) G = Gate S = Source D = Drain Tab = Drain TO-263 (7-Leads) 1 7 D (Tab) Pins: 1 - Gate 2, 3, 5 , 6 , 7 - Source 4 (Tab) - Drain Features  International Standard Packages  Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converte...