IXTA150N15X4-7

X4-Class Power MOSFETTM Advance Technical Information IXTA150N15X4 IXTA150N15X4-7 N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 150 150 20 30 V V V V TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 150 120 260 75 1 10 480 -55 ... +175 175 -55 ... +175 A A A A J V/ns W C C C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C Mounting Force 10..65 / 2.2..14.6 N/lb TO-263 TO-263 (7Leads) 2.5 g 3.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 150 V 2.5 4.5 V 100 nA 10 A 500 A 6.9 m VDSS = ID25 = RDS(on) 150V 150A 6.9m TO-263 G S D (Tab) G = Gate S = Source D = Drain Tab = Drain TO-263 (7-Leads) 1 7 D (Tab) Pins: 1 - Gate 2, 3, 5 , 6 , 7 - Source 4 (Tab) - Drain Features  International Standard Packages  Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode P...