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IXTK400N15X4

IXYS

Power MOSFET

Advance Technical Information X4-Class Power MOSFETTM N-Channel Enhancement Mode Avalanche Rated IXTK400N15X4 IXTX400N...


IXYS

IXTK400N15X4

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Advance Technical Information X4-Class Power MOSFETTM N-Channel Enhancement Mode Avalanche Rated IXTK400N15X4 IXTX400N15X4 VDSS = ID25 = RDS(on)  150V 400A 3.1m TO-264P (IXTK) Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient 150 V 150 V  20 V  30 V TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C 400 160 900 200 3 1500 10 -55 ... +175 175 -55 ... +175 A A A A J W V/ns C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Torque (TO-264) Mounting Force (PLUS247) 1.13/10 20..120 /4.5..27 Nm/lb.in N/lb TO-264 PLUS247 10 g 6g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 1mA IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 150C RDS(on) VGS = 10V, ID = 100A, Note 1 Characteristic Values Min. Typ. Max. 150 V 2.5 4.5 V 200 nA 25 A 2 mA 2.4 3.1 m G D S PLUS247 (IXTX) Tab G DS Tab G = Gate S = Source D = Drain Tab = Drain Features  International Standard Packages  Low QG  Avalanche Rated  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  D...




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