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IXTN400N15X4

IXYS

Power MOSFET

Advance Technical Information X4-Class Power MOSFETTM N-Channel Enhancement Mode Avalanche Rated IXTN400N15X4 D G S S ...


IXYS

IXTN400N15X4

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Advance Technical Information X4-Class Power MOSFETTM N-Channel Enhancement Mode Avalanche Rated IXTN400N15X4 D G S S VDSS = ID25 = RDS(on)  150V 400A 2.7m miniBLOC, SOT-227 E153432 Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dv/dt TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C 50/60 Hz, RMS t = 1 minute IISOL  1mA t = 1 second Mounting Torque Terminal Connection Torque Maximum Ratings 150 150 V V  20 V  30 V 400 A 200 A 900 A 200 A 3J 1070 W 10 V/ns -55 ... +175 175 -55 ... +175 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 1mA IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 150C RDS(on) VGS = 10V, ID = 100A, Note 1 Characteristic Values Min. Typ. Max. 150 V 2.5 4.5 V 200 nA 25 A 2 mA 2.0 2.7 m S G G = Gate S = Source S D D = Drain Features  International Standard Package  miniBLOC, with Aluminium Nitride Isolation  Isolation Voltage 2500 V~  High Current Handling Capability   Low QG Avalanche Rated  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mod...




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