RTAN230T2

ＲＴＡＮ２３０Ｘ SERIES TRAwNwSwIS.DTOatRaSWheITeHt4UR.EcSoImSTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE FEATURE ・Built-in bias resistor(R1=2.2kΩ) ・Small package for easy mounting. ・High reverse hFE ・Small collector to emitter saturation voltage. VCE(sat)=10mV(TYP.)（@IC=10mA/IB=0.5mA） ・Low on Resistance Ron=0.70Ω(TYP.)（@VI=5V） APPLICATION muting circuit , switching circuit OUTLINE DRAWING RTAN230T2 (PRELIMINARY) 0.2 0.8 0.2 Unit：mm RTAN230M 2.1 0.425 1.25 0.425 0.25 2.0 1.3 0.65 0.65 0.3 ① ②③ ① ②③ 1.2 0.8 0.4 0.4 0.9 0.7 0～0.1 0.15 0.5 EQUIVALENT CIRCUIT R1 B (IN) C (OUT) E (GND) JEITA, JEDEC：－ ISAHAYA：T-USM TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR RTAN230U 1.6 0.4 0.8 0.4 ① ②③ JEITA：SC-70 JEDEC：－ TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR RTAN230C 2.5 0.5 1.5 0.5 ① ②③ 1.6 1.0 0.5 0.5 0.3 2.9 1.90 0.95 0.95 0.4 0.7 0.55 0～0.1 0.15 1.1 0.8 0～0.1 0.16 JEITA：SC-75A JEDEC：－ TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR JEITA：SC-59 JEDEC：Similar to TO-236 TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR ISAHAYA ELECTRONICS CORPORATION ＲＴＡＮ２３０Ｘ SERIES TRAwNwSwIS.DTOatRaSWheITeHt4UR.EcSoImSTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE MAXIMUM RATING（Ｔａ＝２５℃） SYMBOL PARAMETER ＶＣＢＯ ＶＥＢＯ ＶＣＥＯ ＩＣ ＰＣ Ｔｊ Ｔｓｔｇ Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature RTAN230T2 125（※） +125 -55～+125 RATING RTAN230U RTAN230M 40 ...