NXP Semiconductors Technical Data
RF Power LDMOS Transistor
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET...
NXP Semiconductors Technical Data
RF Power LDMOS
Transistor
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET
This high ruggedness device is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz.
Typical Performance: VDD = 50 Vdc
Frequency (MHz)
Signal Type
Pout (W)
Gps (dB)
ηD (%)
27 81.36 (1) 87.5–108 (2,3) 230 (4)
CW CW CW Pulse (100 µsec, 20% Duty Cycle)
1550 CW 1400 CW 1475 CW 1500 Peak
25.9 23.0 23.3 23.7
78.3 75.0 83.4 74.0
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type
VSWR
Pin Test (W) Voltage Result
230 (4)
Pulse
> 65:1 at all 13 Peak 50 No Device
(100 µsec, 20% Phase Angles (3 dB
Degradation
Duty Cycle)
Overdrive)
1. Data from 81.36 MHz narrowband reference circuit (page 11). 2. Data from 87.5–108 MHz broadband reference circuit (page 5). 3. The values shown are the center band performance numbers across the indicated
frequency range. 4. Data from 230 MHz narrowband production test fixture (page 16).
Features
High drain--source avalanche energy absorption capability Unmatched input and output allowing wide frequency range utilization Device can be used single--ended or in a push--pull configuration Characterized from 30 to 50 V for ease of use Suitable for linear application Integrated ESD protection with ...
