NXP Semiconductors Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFE...
NXP Semiconductors Technical Data
RF Power LDMOS
Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast,
sub--GHz aerospace and mobile radio applications. Their unmatched input and
output design allows for wide frequency range use from 1.8 to 500 MHz.
Typical Performance: VDD = 50 Vdc
Frequency (MHz)
Signal Type
Pout (W)
Gps (dB)
ηD (%)
87.5--108 (1,2) 230 (3,4)
CW
Pulse (100 μsec, 20% Duty Cycle)
1421 CW 1500 Peak
23.1 23.4
83.2 75.1
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type
VSWR
Pin Test
(W)
Voltage
Result
230 (3)
Pulse
> 65:1 at all 15 Peak 50 No Device
(100 μsec, 20% Phase Angles (3 dB
Degradation
Duty Cycle)
Overdrive)
1. Data from 87.5–108 MHz broadband reference circuit (page 5). 2. The values shown are the center band performance numbers across the indicated
frequency range. 3. Data from 230 MHz narrowband production test fixture (page 11). 4. All data measured in fixture with device soldered to heatsink.
Features High drain--source avalanche energy absorption capability Unmatched input and output allowing wide frequency range utilization Device can be used single--ended or in a push--pull configuration Characterized from 30 to 50 V for ease of use Suitable for linear application Integrated ESD protection with greater negative gate--source voltage r...
