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XZM2DG55W-3

SunLED

SMD Chip LED Lamp

Features ● Ideal for indication light on hand held products ● Long life and robust package ● Standard Package: 2,000pcs/...


SunLED

XZM2DG55W-3

File Download Download XZM2DG55W-3 Datasheet


Description
Features ● Ideal for indication light on hand held products ● Long life and robust package ● Standard Package: 2,000pcs/ Reel ● MSL (Moisture Sensitivity Level): 3 ● RoHS compliant Package Schematics Part Number: XZM2DG55W-3 3.2x1.6mm SMD CHIP LED LAMP ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.2(0.008") unless otherwise noted. 3. Specifications are subject to change without notice. Absolute Maximum Ratings (TA=25°C) Green (InGaN) Unit Reverse Voltage VR 5 V Forward Current IF 30 mA Forward Current (Peak) 1/10 Duty Cycle 0.1ms Pulse Width iFS 100 mA Power Dissipation PD 120 mW Operating Temperature Storage Temperature TA Tstg -40 ~ +85 -40 ~ +85 °C Electrostatic Discharge Threshold (HBM) 450 V A Relative Humidity between 40% and 60% is recommended in ESD-protected work areas to reduce static build up during assembly process (Reference JEDEC/JESD625-A and JEDEC/J-STD-033) Operating Characteristics (TA=25°C) Forward Voltage (Typ.) (IF=20mA) Forward Voltage (Max.) (IF=20mA) Reverse Current (Max.) (VR=5V) Wavelength of Peak Emission CIE127-2007*(Typ.) (IF=20mA) Wavelength of Dominant Emission CIE127-2007*(Typ.) (IF=20mA) Spectral Line Full Width At Half-Maximum (Typ.) (IF=20mA) Capacitance (Typ.) (VF=0V, f=1MHz) Green (InGaN) Unit VF 3.2 V VF 4 V IR 50 μA λP 520* nm λD 525* nm △λ 35 nm C 100 pF Part Number XZM2DG55W-3 Emitting C...




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