70S900P7

IPD70R900P7S MOSFET 700VCoolMOSªP7PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcost sensitiveapplicationsinconsumermarketssuchascharger,adapter, lighting,TV,etc. ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof theartease-of-uselevel.Thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns. Features ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss Excellentthermalbehavior IntegratedESDprotectiondiode Lowswitchinglosses(Eoss) Productvalidationacc.JEDECStandard Benefits Costcompetitivetechnology Lowertemperature HighESDruggedness Enablesefficiencygainsathigherswitchingfrequencies Enableshighpowerdensitydesignsandsmallformfactors Potentialapplications RecommendedforFlybacktopologiesforexampleusedinChargers, Adapters,LightingApplications,etc. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25°C RDS(on),max 700 0.9 V Ω Qg,typ 6.8 nC ID,pulse 12.8 A Eoss ...