70S900P7 MOSFET Datasheet

70S900P7 Datasheet, PDF, Equivalent


Part Number

70S900P7

Description

MOSFET

Manufacture

Infineon

Total Page 13 Pages
Datasheet
Download 70S900P7 Datasheet


70S900P7
IPD70R900P7S
MOSFET
700VCoolMOSªP7PowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcost
sensitiveapplicationsinconsumermarketssuchascharger,adapter,
lighting,TV,etc.
ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction
MOSFET,combinedwithanexcellentprice/performanceratioandstateof
theartease-of-uselevel.Thetechnologymeetshighestefficiency
standardsandsupportshighpowerdensity,enablingcustomersgoing
towardsveryslimdesigns.
Features
•ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss
•Excellentthermalbehavior
•IntegratedESDprotectiondiode
•Lowswitchinglosses(Eoss)
•Productvalidationacc.JEDECStandard
Benefits
•Costcompetitivetechnology
•Lowertemperature
•HighESDruggedness
•Enablesefficiencygainsathigherswitchingfrequencies
•Enableshighpowerdensitydesignsandsmallformfactors
Potentialapplications
RecommendedforFlybacktopologiesforexampleusedinChargers,
Adapters,LightingApplications,etc.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C
RDS(on),max
700
0.9
V
Qg,typ
6.8
nC
ID,pulse
12.8
A
Eoss @ 400V
0.9
µJ
V(GS)th,typ
3
V
ESD class (HBM) 1C
Type/OrderingCode
IPD70R900P7S
Package
PG-TO 252-3
Marking
70S900P7
DPAK
tab
2
1
3
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.1,2018-02-13

70S900P7
700VCoolMOSªP7PowerTransistor
IPD70R900P7S
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2 Rev.2.1,2018-02-13


Features IPD70R900P7S MOSFET 700VCoolMOSªP7P owerTransistor CoolMOS™isarevolut ionarytechnologyforhighvoltagepowe r MOSFETs,designedaccordingtothesu perjunction(SJ)principleand pioneere dbyInfineonTechnologies. Thelatest CoolMOS™P7isanoptimizedplatform tailoredtotargetcost sensitiveappli cationsinconsumermarketssuchascha rger,adapter, lighting,TV,etc. Then ewseriesprovidesallthebenefitsof afastswitchingSuperjunction MOSFET, combinedwithanexcellentprice/perfor manceratioandstateof theartease-o f-uselevel.Thetechnologymeetshighe stefficiency standardsandsupportshi ghpowerdensity,enablingcustomersgo ing towardsveryslimdesigns. Features •Extremelylowlossesduetoveryl owFOMRDS(on)*QgandRDS(on)*Eoss • Excellentthermalbehavior •Integrat edESDprotectiondiode •Lowswitchi nglosses(Eoss) •Productvalidation acc.JEDECStandard Benefits •Cost competitivetechnology •Lowertemperature •HighESDruggedness •Enableseffic.
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