TLD8S10AH

TLD8S10AH – TLD8S43AH Taiwan Semiconductor 6600W, 10V – 43V Surface Mount Transient Voltage Suppressor FEATURES ● AEC-Q101 qualified ● Junction passivation optimized design technology ● TJ =175 °C capability suitable for high reliability and automotive requirement ● Moisture sensitivity level: level 1, per J-STD-020 ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 ● Meets ISO7637-2 and ISO16750-2 surge specifications (varied by test conditions) ● Meets IEC 61000-4-2 (Level: 4) / ISO 10605 (Level: L4) KEY PARAMETERS PARAMETER VALUE UNIT VWM 10 – 43 V VBR PPPM (10x1,000μs) PPPM (10x10,000μs) 11.1 – 52.8 6600 5200 V W W TJ MAX Package 175 °C DO-218AB APPLICATIONS ● Transient Surge Protection. ● Automotive Load Dump Surge Protection. MECHANICAL DATA ● Case: DO-218AB ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Uni-directional ● Weight: 2.691g (approximately) DO-218AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Non-repetitive peak impulse power dissipation with 10/1000μs waveform Non-repetitive peak impulse power dissipation with 10/10000μs waveform (1) Steady state power dissipation (Fig.1) Forward Voltage at IF=100 A (2) PPPM PPPM PD VF, MAX Peak forward surge current, 8.3 ms single half sine-wave IFSM Junction temperature TJ Storage t...