STN0214

STN0214 Very high voltage NPN power transistor Features ■ High gain ■ Very high voltage capability Applications ■ Haptic ■ High voltage solenoid driving Description The device is an NPN power bipolar transistor manufactured using the latest high-voltage diffused collector technology. 4 3 2 1 SOT-223 Figure 1. Internal schematic diagram Table 1. Device summary Order code STN0214 Marking N0214 Package SOT-223 February 2012 Doc ID 022769 Rev 1 Packaging Tape and reel 1/7 www.st.com 7 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VCES VCEO VEBO IC ICM IB IBM PTOT Tstg TJ Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 1 ms) Total dissipation at Tamb = 25 °C Storage temperature Max. operating junction temperature Table 3. Thermal data Symbol Parameter Rthj-amb (1) Thermal resistance junction-ambient 1. When mounted on PCB area of 1 cm2, t < 10 sec STN0214 Value 1400 1200 6 200 400 100 200 1.6 -65 to 150 150 Unit V V V mA mA mA mA W °C Value 78 Unit °C/W 2/7 Doc ID 022769 Rev 1 STN0214 2 Electrical characteristics Electrical characteristics (TCASE = 25 °C; unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. ICES IEBO VCEO(sus)(1) VCE(sat) (1) Collector cut-off current (VBE = 0) Emitter cut-off current (IB = 0) Co...