M95512-DF

M95512-W M95512-R M95512-DF Datasheet 512-Kbit serial SPI bus EEPROM SO8N (150 mil width) TSSOP8 (169 mil width) UFDFPN8 (DFN8) (2 x 3 mm) WLSCP8 (1.289 x 1.955 mm) Product status link M95512-DF M95512-R M95512-W Features Compatible with the serial peripheral interface (SPI) bus Memory array – 512-Kbit (64-Kbyte) of EEPROM – Page size: 128 bytes – Additional write lockable page (Identification page) Write time – Byte Write within 5 ms – Page Write within 5 ms Write protect – quarter array – half array – whole memory array High-speed clock: 16 MHz Single supply voltage: – 2.5 V to 5.5 V for M95512-W – 1.8 V to 5.5 V for M95512-R – 1.7 V to 5.5 V for M95512-DF Operating temperature range: from -40 °C up to +85 °C Enhanced ESD protection More than 4 million Write cycles More than 200-year data retention Packages – SO8N (ECOPACK2) – TSSOP8 (ECOPACK2) – UFDFPN8 (ECOPACK2) – WLCSP8 (ECOPACK2) DS4192 - Rev 24 - September 2021 For further information contact your local STMicroelectronics sales office. www.st.com M95512-W M95512-R M95512-DF Description 1 Description The M95512 devices are electrically erasable programmable memories (EEPROMs) organized as 65536 x 8 bits, accessed through the SPI bus. The M95512-W can operate with a supply voltage from 2.5 V to 5.5 V, the M95512-R can operate with a supply voltage from 1.8 V to 5.5 V and the M95512-DF can operate with a supply voltage from 1.7 V to 5.5 V, over an ambient temperature range of -40 °C / +85 °C...