TK4R3A06PL

MOSFETs Silicon N-channel MOS (U-MOS�-H) TK4R3A06PL 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 15.1 nC (typ.) (3) Small output charge: Qoss = 39 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK4R3A06PL TO-220SIS 1: Gate 2: Drain 3: Source ©2016-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2016-10 2021-01-27 Rev.3.0 TK4R3A06PL 4. Absolute Maximum Ratings (Note) (Ta = 25 � unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Single-pulse avalanche current Channel temperature Storage temperature Isolation voltage (RMS) Mounting torque (Tc = 25 �) (t = 100 µs) (Tc = 25 �) (t = 1.0 s) (Note 1) (Note 1) (Note 2) (Note 2) VDSS VGSS ID IDP PD EAS IAS Tch Tstg VISO(RMS) TOR 60 ±20 68 350 36 34 68 175 -55 to 175 2000 0.6 V A A W mJ A � � V N�m Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operat...