3NM60N

STL3NM60N N-channel 600 V, 1.5 Ω, 2.2 A MDmesh™ II Power MOSFET in a PowerFLAT™ 3.3 x 3.3 HV package Datasheet - production data 1 2 3 4 8 7 6 5 5 6 7 8 PowerFLAT™ 3.3x3.3 HV Features Order code STL3NM60N RDS(on) max. 1.8 Ω ID 2.2 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Application Switching applications Figure 1. Internal schematic diagram 4G 3 2 1S 5 6 D 7 8 Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Bottom View Order code STL3NM60N Table 1. Device summary Marking Package 3NM60N PowerFLAT™ 3.3 x 3.3 HV Packaging Tape and reel November 2014 This is information on a product in full production. DocID022795 Rev 2 1/13 www.st.com Contents Contents STL3NM60N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanica...