Document
2SC5462
Silicon NPN Triple Diffused Character Display Horizontal Deflection Output
Features
• High breakdown voltage VCBO = 1500 V
• High speed switching tf = 0.15 µsec(typ.) at fH=64kHz
• Isolated package TO–3PFM
Outline
TO–3PFM
ADE-208-671 (Z) 1st. Edition Oct. 1, 1998
1 2 3
1. Base 2. Collector 3. Emitter
2SC5462
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25°C
Symbol VCBO VCEO VEBO IC ic(peak) P Note1
C
Tj Tstg
Ratings 1500 700 6 20 40 50 150 –55 to +150
Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Fall time
Symbol V(BR)CEO
V(BR)EBO
I CES hFE1 hFE2 VCE(sat)
VBE(sat)
tf
Min 700
6
— 10 3.5 —
—
—
Fall time
tf —
Typ —
—
— — — —
—
0.2
0.15
Max —
—
500 40 6.5 5
1.5
0.4
—
Unit V V µA
V V µs µs
Test Conditions IC = 10mA, RBE = •
IE = 10mA, IC = 0
VCE = 1500V, RBE = 0 VCE = 5 V, IC = 1A VCE = 5 V, IC = 10A IC = 12A, IB = 4A
IC = 12A, IB = 4A
ICP = 8A, IB1= 3A fH = 31.5kHz ICP = 8A, IB1= 2A fH = 64kHz
2
Collector Power Dissipation Pc (W)
Main Characteristics
Collector Power Dissipation vs. Temperature
80
60
40
20
0 50 100 150 200 Case Temperature Tc (°C)
Collector Current I C (A)
2SC5462
Area of Safe Operaion 50 20 10
5
2 1 0.5 L = 180 µH
I B2 = –1 A 0.2 duty < 1 %
Tc = 25°C 0.1
10 100 1000 5000 Collector to Emitter Voltage VCE (V)
Collector Current I C (A)
Pc = 50 W
Typical Output Characteristics 10
2.01A.81.A6 A 1.4 A 1.2 A 1.0 A 0.8 A
5 0.6 A
0.4 A
0.2 A
Tc = 25 °C
IB=0
0 5 10
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio hFE
DC Current Transfer Ratio vs. Collector Current
100
50 75 °C
20 10 25 °C
5 Tc = –25 °C
2
VCE = 5 V 1 0.1 0.2 0.5 1 2 5 10
Collector Current IC (A)
20
3
2SC5462
Collector to Emitter Saturation Voltage VCE(sat) (V)
Collector to Emitter Saturation Voltage
vs. Collector Current 10
IC/I B=3 5
2 75 °C
1 25 °C
0.5
0.2
0.1 Tc = –25 °C
0.05 0.1 0.2 0.5 1 2
5 10 20
Collector Current I C (A)
Base to Emitter Saturation Voltage V BE(sat) (V)
Base to Emitter Saturation Voltage vs. Collector Current
10 IC/I B=3
5
2 Tc = –25°C
1
0.5 25 °C 75 °C
0.2
0.1 0.2 0.5 1 2 5 10 20 Collector Current I C (A)
Collector to Emitter Saturation Voltage V CE(sat) (V)
Collector to Emitter Saturation Voltage vs. Base Current
10
I C= 6 A
8A
5 10 A
0 Tc = 25°C
0.1 0.2 0.5 1 2
5
Base Current I B (A)
10
Fall Time t f (µs)
Fall Time vs. Base Current 0.8
I CP = 8 A fH = 64 kHz 0.6 Tc = 25°C
0.4
0.2
0 0.6 1.0 1.4 1.8 2.2 2.6 3.0
Base Current I B1 (A)
4
Storage Time tstg (µs)
Storage Time vs. Base Current 8
I CP = 8 A fH = 64 kHz 6 Tc = 25°C
4
2
0 0.6 1.0 1.4 1.8 2.2 2.6 3.0
Base Current I B1 (A)
2SC5462
5
2SC5462
Package Dimensions (Unit: mm)
16.0 Max φ 3.2
5.8 Max
5.0 ± 0.3
2.7 5.0
19.9 ± 0.3
4.0 2.6 1.4 Max
5.45 ± 0.5
1.6 1.4 Max
0.66
+0.2 –0.1
5.45 ± 0.5
21.0 ± 0.5
3.2
0.9
+0.2 –0.1
Hitachi Code TO–3PFM
EIAJ
—
JEDEC
—
6
2SC5462
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such.