DF2S6P2FU

ESD Protection Diodes Silicon Epitaxial Planar DF2S6P2FU DF2S6P2FU 1. General The DF2S6P2FU is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. The DF2S6P2FU has realized high IPP, in order to protect a semiconductor devices from the indirect lightning stroke and the transition voltage (at the time of power activation). Furthermore, the DF2S6P2FU is housed in an standard package (2.5 mm × 1.25 mm), it can be used for various applications. 2. Applications Mobile Equipment  Smartphones  Tablets  Notebook PCs Desktop PCs Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 3. Features (1) Suitable for use with a 5.0 V signal line. (VRWM ≤ 5.5 V) (2) Protects devices with its high ESD performance. (VESD = ±30 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.08 Ω (typ.)) (4) Low clamping voltage characteristic protects semiconductor devices from static electricity and noise. (VC = 18 V@IPP = 80 A (typ.)) (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (2.5 mm × 1.25 mm size (Nickname: USC)) 4. Packaging USC ©2017-2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial product...